MMBF170LT1G ON Semiconductor, MMBF170LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBF170LT1G
• Description: MOSFET N-CH 60V 500MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMBF170LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 500mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.45 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.5 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.5 A
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 10 ns
• Time, Turn-on Delay: 10 ns
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Gate To Source: ±20 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBF170LT1GOS; MMBF170LT1GOS; MMBF170LT1GOSTR

Final Product/Process Change Notification #16257
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SOT23 Products assembled with the Copper Wire from the ON Semiconductor facility in
Leshan, China, will have a Finish Good Date Code representing Work Week 31, 2009 or
newer.
Issue Date: 26 May 2009
Rev.14 Jun 2007
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