BSS138LT1G ON Semiconductor, BSS138LT1G Datasheet - Page 3

• Manufacturer Part Number: BSS138LT1G
• Description: MOSFET N-CH 50V 200MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of BSS138LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.1 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 200 mA
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 3.5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 20 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 100 Millimhos
• Voltage, Breakdown, Drain To Source: 50 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 200mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS138LT1GOSTR

0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.8
0.6
2.2
1.8
1.6
1.4
1.2
10
0
8
6
4
2
0
2
1
- 55
0
T
J
1
V
T
= 25°C
J
DS
Figure 1. On−Region Characteristics
= 25°C
Figure 3. On−Resistance Variation with
= 40 V
V
500
DS
2
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-5
T
J
3
Q
, JUNCTION TEMPERATURE (°C)
T
Figure 5. Gate Charge
1000
, TOTAL GATE CHARGE (pC)
V
4
GS
Temperature
= 3.5 V
I
D
5
1500
= 200 mA
45
TYPICAL ELECTRICAL CHARACTERISTICS
6
2000
7
V
I
D
GS
= 0.8 A
V
95
V
V
GS
V
GS
GS
= 10 V
8
GS
= 3.25 V
= 3.0 V
= 2.75 V
V
I
2500
D
= 2.5 V
GS
= 0.5 A
9
http://onsemi.com
= 4.5 V
10
3000
145
3
1.0E-5
1.0E-6
1.0E-7
1.0E-8
1.0E-9
1.125
0.875
1.25
0.75
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1
- 55
0
0
0
V
DS
-30
5
0.5
Figure 4. Threshold Voltage Variation
= 10 V
Figure 2. Transfer Characteristics
V
10
V
GS
DS
-5
T
1
, GATE-TO-SOURCE VOLTAGE (VOLTS)
J
, DRAIN-TO-SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
15
with Temperature
1.5
20
Figure 6. IDSS
20
I
D
2
= 1.0 mA
45
25
- 55°C
2.5
30
70
3
35
95
25°C
3.5
40
120
150°C
125°C
150°C
45
4
145
4.5
50