NTS4173PT1G ON Semiconductor, NTS4173PT1G Datasheet - Page 2

• Manufacturer Part Number: NTS4173PT1G
• Description: MOSFET P-CH 30V 1.2A SC70-3
• Manufacturer: ON Semiconductor

Specifications of NTS4173PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 150 mOhm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 15V
• Power - Max: 290mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.15 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 3.6 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 1.2 A
• Power Dissipation: 350 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

2. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces)
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
MOSFET ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
DRAIN−SOURCE DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Drain−to−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Parameter
V
Symbol
Q
Q
V
R
Q
Q
(BR)DSS
t
t
GS(TH)
t
t
I
I
C
G(TOT)
Q
Q
G(TOT)
Q
Q
Q
DS(on)
C
C
V
g
d(on)
d(off)
d(on)
d(off)
GSS
G(TH)
G(TH)
t
DSS
RR
t
t
oss
t
t
FS
GS
GD
GS
GD
t
t
SD
RR
iss
rss
a
b
r
f
r
f
(T
V
J
V
V
DS
= 25°C unless otherwise noted)
GS
GS
http://onsemi.com
V
V
V
V
= 20 V, V
= 0 V, V
= 0 V, V
V
V
V
GS
GS
V
V
GS
GS
V
V
V
GS
GS
V
GS
DS
GS
I
I
GS
GS
DS
D
D
GS
= −4.5 V, V
= −4.5 V, V
dI
= −10 V, V
= −10 V, V
= −1.2 A, R
= −1.2 A, R
Test Condition
= −4.5 V, I
= −2.5 V, I
= 0 V, V
= V
= −10 V, I
= 0 V, I
SD
= −5 V, I
= 0 V, f = 1.0 MHz,
= 0 V, I
V
I
I
2
DS
D
D
DS
DS
/d
DS
GS
= −1.2 A
= −1.2 A
t
= −24 V, T
= −24 V, T
, I
= −15 V
= 100 A/ms
= 0 V, I
D
GS
D
S
D
= −250 mA
DS
DS
D
DS
DS
= −250 mA
D
D
= −1.0 A
= −1.2 A
G
G
= "12 V
= −1.2 A
= −1.0 A
= −0.9 A
= −15 V,
= −15 V,
= −15 V,
= −15 V,
= 3 W
= 3 W
S
= −1.0 A,
J
J
= 25°C
= 85°C
−0.7
Min
−30
−1.15
10.1
16.2
19.9
−0.8
Typ
165
430
110
3.6
4.8
0.6
1.1
1.5
0.6
1.1
1.5
7.7
5.2
6.7
5.3
6.7
7.1
2.0
7.0
90
55
40
12
10
Max
−1.0
−5.0
±0.1
−1.5
−1.0
150
200
280
Units
mW
nC
nC
nC
mA
mA
pF
ns
ns
ns
V
V
S
V