NTR1P02T1G ON Semiconductor, NTR1P02T1G Datasheet - Page 3
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NTR1P02T1G
Manufacturer Part Number
NTR1P02T1G
Description
MOSFET P-CH 20V 1A SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet
1.NTR1P02T1G.pdf
(6 pages)
Specifications of NTR1P02T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
2.3V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 5V
Input Capacitance (ciss) @ Vds
165pF @ 5V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.18 Ohm @ 10 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
400 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.18Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTR1P02T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
69 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
36 000
Company:
Part Number:
NTR1P02T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR1P02T1G
Manufacturer:
ON/安森美
Quantity:
20 000
2.25
1.75
1.25
0.75
0.25
0.45
0.35
0.25
0.15
0.05
2.5
1.5
0.5
0.4
0.3
0.2
0.1
2.5
1.5
0.5
2
1
0
2
1
0
−45
0
0.1
Figure 3. On−Resistance versus Drain Current
−V
V
I
V
0.25
GS
−4.5 V
D
0.2
−20
Figure 5. On−Resistance Variation with
DS
GS
Figure 1. On−Region Characteristics
= −1.5 A
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −10 V
T
0.3
J
, JUNCTION TEMPERATURE (°C)
0.5
−I
5
−4 V
D
, DRAIN CURRENT (AMPS)
0.4
and Temperature
0.75
30
Temperature
0.5
1
55
0.6
1.25
80
V
0.7
GS
−3.5 V
−3 V
1.5
= −2.5 V
105
T
T
T
0.8
J
J
J
T
= 150°C
= −40°C
= 25°C
J
= 25°C
1.75
130
http://onsemi.com
0.9
NTR1P02T1
155
2
1
3
0.275
0.225
0.175
0.125
0.075
1000
1.75
1.25
0.75
0.25
0.25
0.15
0.05
100
1.5
0.5
0.1
0.2
10
2
1
0
1
1
0.2
1
Figure 4. On−Resistance versus Drain Current
V
Figure 6. Drain−to−Source Leakage Current
V
V
GS
−V
GS
DS
−V
3
0.4
DS
= 0 V
GS
= −10 V
≥ −10 V
1.5
Figure 2. Transfer Characteristics
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
5
−I
D
0.6
, DRAIN CURRENT (AMPS)
7
2
and Temperature
versus Voltage
T
T
J
J
9
= 150°C
0.8
= 125°C
T
J
= 125°C
2.5
T
T
11
T
J
J
J
= 150°C
= −40°C
= 25°C
1
13
3
15
1.2
T
T
J
J
17
= −40°C
= 25°C
3.5
1.4
19
1.6
21
4