NTD4863N-35G ON Semiconductor, NTD4863N-35G Datasheet - Page 5

• Manufacturer Part Number: NTD4863N-35G
• Description: MOSFET N-CH 25V 9.2A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4863N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9.3 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 13.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 990pF @ 12V
• Power - Max: 1.27W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak (3 straight short leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
100
100
1200
1000
0.1
10
10
800
600
400
200
1
1
0.1
1
0
0
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
DD
GS
C
C
GS
= 30 A
V
rss
= 25°C
C
DS
C
= 15 V
= 11.5 V
= 20 V
t
t
iss
Figure 9. Resistive Switching Time
d(off)
d(on)
oss
DRAIN--TO--SOURCE VOLTAGE (VOLTS)
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
t
t
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
f
R
5
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
Safe Operating Area
1
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
20
V
T
10 ms
100 ms
1 ms
10 ms
dc
GS
J
= 25°C
http://onsemi.com
= 0 V
100
100
25
5
30
25
20
15
10
60
50
40
30
20
10
10
5
0
0
0.2
8
6
4
2
0
25
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
Figure 10. Diode Forward Voltage vs. Current
V
T
Figure 12. Maximum Avalanche Energy vs.
GS
J
Q
V
= 25°C
2
SD
1
= 0 V
50
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
T
J
4
Q
0.4
, JUNCTION TEMPERATURE (°C)
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
Q
2
75
6
8
Q
0.6
100
T
10
125
12
V
0.8
GS
14
I
150
I
T
D
D
J
= 11 A
= 30 A
= 25°C
16
175
1.0
20