NTHS5443T1G ON Semiconductor, NTHS5443T1G Datasheet - Page 3

• Manufacturer Part Number: NTHS5443T1G
• Description: MOSFET P-CH 20V 3.6A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS5443T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 3.6A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.6A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 4.5V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS5443T1GOS; NTHS5443T1GOS; NTHS5443T1GOSTR

0.15
0.05
0.2
0.1
10
0
1.6
1.4
1.2
0.8
0.6
8
6
4
2
0
0
1
0
−5 V
−50
−4 V
−6 V
−V
−V
I
V
D
Figure 1. On−Region Characteristics
−25
DS
GS
GS
Figure 5. On−Resistance Variation with
= −3.6 A
0.5
1
Figure 3. On−Resistance versus
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= −4.5 V
T
Gate−to−Source Voltage
J
, JUNCTION TEMPERATURE (°C)
0
2
1
−3.4 V
−2.8 V
−2.6 V
−2.4 V
25
Temperature
1.5
3
50
TYPICAL ELECTRICAL CHARACTERISTICS
75
4
2
I
T
V
D
J
GS
100
= −3.6 A
= 25°C
T
2.5
J
= −1.4 V
5
= 25°C
−2.2 V
−1.8 V
−1.6 V
http://onsemi.com
−2 V
125
NTHS5443
6
3
150
3
10,000
1000
0.08
0.06
0.04
0.02
100
10
10
8
6
4
2
0
Figure 4. On−Resistance versus Drain Current
0
0.5
1
Figure 6. Drain−to−Source Leakage Current
V
V
−V
−V
DS
GS
2
GS
DS
≥ −10 V
= 0 V
Figure 2. Transfer Characteristics
25°C
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
4
1
−I
3
D,
DRAIN CURRENT (AMPS)
and Gate Voltage
125°C
4
versus Voltage
1.5
T
8
J
= −55°C
5
T
T
J
J
= 150°C
= 100°C
6
12
2
V
V
GS
GS
7
= −4.5 V
= −6 V
T
2.5
J
8
16
= 25°C
9
20
10
3