NTHS4101PT1G ON Semiconductor, NTHS4101PT1G Datasheet - Page 3

• Manufacturer Part Number: NTHS4101PT1G
• Description: MOSFET P-CH 20V 4.8A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHS4101PT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 34 mOhm @ 4.8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2100pF @ 16V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.034 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1300 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHS4101PT1GOS; NTHS4101PT1GOS; NTHS4101PT1GOSTR

0.08
0.06
0.04
0.02
10
0.1
9
2
1
0
8
7
6
5
4
3
0
0
Figure 3. On−Resistance vs. Drain Current and
2
−V
V
GS
1
DS
Figure 1. On−Region Characteristics
4
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −10 V to −2.4 V
2
−I
D,
6
V
TYPICAL PERFORMANCE CURVES
DRAIN CURRENT (AMPS)
GS
Gate Voltage
3
= −1.8 V
8
10000
4
1000
100
0.1
10
1
10
0
5
V
−1.8 V
−1.6 V
−1.4 V
−1.2 V
GS
Figure 5. Drain−to−Source Leakage Current
−V
12
= 0 V
DS,
6
V
V
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
T
GS
J
2
= 25°C
= −4.5 V
14
= −2.5 V
7
http://onsemi.com
NTHS4101P
8
16
vs. Voltage
T
T
T
J
J
3
J
= 100°C
= 125°C
4
= 25°C
(T
1.5
1.3
1.1
0.9
0.7
0.5
J
10
9
8
7
6
5
4
3
2
1
0
= 25°C unless otherwise noted)
−50
0
V
GS
Figure 4. On−Resistance Variation with
−V
−25
6
= −4.5 V
GS
0.5
T
Figure 2. Transfer Characteristics
J
, GATE−TO−SOURCE VOLTAGE (VOLTS)
, JUNCTION TEMPERATURE (°C)
0
25°C
1
Temperature
8
25
125°C
1.5
50
T
J
= −55°C
75
2
100
2.5
125
150
3