NTD4858N-35G ON Semiconductor, NTD4858N-35G Datasheet

NTD4858N-35G

Manufacturer Part Number

NTD4858N-35G

Description

MOSFET N-CH 25V 11.2A IPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD4858NT4G.pdf (8 pages)

Specifications of NTD4858N-35G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

6.2 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

25V

Current - Continuous Drain (id) @ 25° C

11.2A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

19.2nC @ 4.5V

Input Capacitance (ciss) @ Vds

1563pF @ 12V

Power - Max

1.3W

Mounting Type

Through Hole

Package / Case

IPak, TO-251, DPak (3 straight short leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0062 Ohms

Drain-source Breakdown Voltage

25 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

14 A

Power Dissipation

2 W

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD4858N-35G

Manufacturer:

ON Semiconductor

Quantity:

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NTD4858N

Power MOSFET

25 V, 73 A, Single N- -Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

June, 2010 - - Rev. 1

MAXIMUM RATINGS

Drain--to--Source Voltage

Gate--to--Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain--to--Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Trench Technology

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

These are Pb- -Free Devices

VCORE Applications

DC- -DC Converters

High/Low Side Switching

θJA

θJC

= 15 A

(Note 1)

(Note 2)

(Note 1)

DS(on)

θJA

θJC

, L = 1.0 mH, R

= 25°C, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 50 V, V

= 25 Ω)

= 25°C unless otherwise stated)

= 10 V,

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DmaxPkg

dV/dt

EAS

STG

DSS

Value

--55 to

112.5

+175

10.9

11.2

54.5

±20

146

260

2.0

8.7

1.3

Unit

V/ns

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

STYLE 2

Drain

Drain 3

(BR)DSS

25 V

DPAK

Source

ORDERING INFORMATION

4858N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

N- -CHANNEL MOSFET

http://onsemi.com

Gate

9.3 mΩ @ 4.5 V

6.2 mΩ @ 10 V

(Straight Lead)

CASE 369AC

= Year

= Work Week

= Pb--Free Package

DS(ON)

Drain

3 IPAK

2 3

Publication Order Number:

MAX

Source

Gate

(Straight Lead

CASE 369D

NTD4858N/D

Drain

DPAK)

Drain

IPAK

73 A

MAX

Source

Related parts for NTD4858N-35G

NTD4858N-35G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4858N = Device Code G = Pb--Free Package ORDERING INFORMATION Publication Order Number: NTD4858N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction--to--Case (Drain) Junction--to--TAB (Drain) Junction--to--Ambient – Steady State (Note 1) Junction--to--Ambient – Steady State (Note 2) 1. Surface--mounted on FR4 board using 1 sq--in pad Cu. 2. Surface--mounted on FR4 board using the ...

Page 3

ELECTRICAL CHARACTERISTICS Parameter DRAIN- -SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge PACKAGE PARASITIC VALUES Source Inductance Drain Inductance, DPAK Drain Inductance, IPAK Gate Inductance Gate Resistance 3. Pulse Test: pulse width ...

Page 4

V 3 DRAIN--TO--SOURCE VOLTAGE (VOLTS) DS Figure 1. On- -Region Characteristics 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0 ...

Page 5

C 1800 iss 1600 1400 1200 1000 800 C oss 600 400 200 C rss 0 0 2.5 5 7.5 10 12.5 DRAIN--TO--SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 ...

Page 6

... SINGLE PULSE 0.01 1.0E--05 1.0E--04 ORDERING INFORMATION Device NTD4858NT4G NTD4858N--1G NTD4858N--35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES P (pk DUTY CYCLE ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA--01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED 90 CW ° SOLDERING FOOTPRINT* 6 ...

Page 8

... R 0.180 0.215 4.45 5.45 S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 ------ 3.93 ------ STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4858N/D ...

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