NTD4805N-1G ON Semiconductor, NTD4805N-1G Datasheet - Page 5

• Manufacturer Part Number: NTD4805N-1G
• Description: MOSFET N-CH 30V 12.6A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4805N-1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 12.6A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2865pf @ 12V
• Power - Max: 1.35W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Forward Transconductance Gfs (max / Min): 17 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 88 A
• Power Dissipation: 2.24 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
1000
GATE--TO--SOURCE OR DRAIN--TO--SOURCE VOLTAGE (VOLTS)
100
100
5000
4000
3000
2000
1000
10
10
0.1
1
1
0
1
0.1
10
V
I
V
D
C
Figure 11. Maximum Rated Forward Biased
C
DD
GS
rss
= 30 A
V
SINGLE PULSE
T
V
iss
C
GS
DS
= 15 V
V
= 11.5 V
t
t
d(on)
Figure 9. Resistive Switching Time
= 25°C
d(off)
DS
5
, DRAIN--TO--SOURCE VOLTAGE (VOLTS)
= 20 V
t
t
V
f
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
= 0 V
R
GS
G
R
THERMAL LIMIT
PACKAGE LIMIT
, GATE RESISTANCE (OHMS)
DS(on)
C
Safe Operating Area
0
rss
1
V
GS
V
DS
LIMIT
= 0 V
5
10
10
10
TYPICAL PERFORMANCE CURVES
15
T
J
10 ms
1 ms
10 ms
= 25°C
100 ms
dc
20
http://onsemi.com
C
C
oss
iss
100
100
25
5
450
400
350
300
250
200
150
100
30
25
20
15
10
50
0.5
7
6
5
4
3
2
1
5
0
0
0
25
0
Figure 8. Gate- -To- -Source and Drain- -To- -Source
Figure 10. Diode Forward Voltage vs. Current
V
Figure 12. Maximum Avalanche Energy vs.
T
GS
J
V
= 25°C
SD
= 0 V
50
, SOURCE--TO--DRAIN VOLTAGE (VOLTS)
Q
Starting Junction Temperature
0.6
T
5
1
J
Q
, JUNCTION TEMPERATURE (°C)
G
Voltage vs. Total Charge
, TOTAL GATE CHARGE (nC)
75
0.7
10
Q
T
100
Q
2
0.8
15
125
I
V
T
D
J
0.9
GS
20
I
= 30 A
150
= 25°C
D
= 4.5 V
= 29 A
175
25
1.0