NDD03N60ZT4G ON Semiconductor, NDD03N60ZT4G Datasheet - Page 2
![MOSFET N-CH 600V DPAK](/photos/5/51/55181/488-d-pak_sml.jpg)
NDD03N60ZT4G
Manufacturer Part Number
NDD03N60ZT4G
Description
MOSFET N-CH 600V DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF03N60ZG.pdf
(10 pages)
Specifications of NDD03N60ZT4G
Package / Case
DPak, DPak-3, SOT-223, TO-220, TO-220AB, TO-225AA, TO-92
Mounting Type
Surface Mount
Power - Max
61W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
12nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.6A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 Ohms
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
2.6 A
Power Dissipation
61 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Package
3DPAK
Channel Mode
Enhancement
Channel Type
N
Typical Fall Time
10 ns
Typical Rise Time
8 ns
Typical Turn-off Delay Time
16 ns
Typical Turn-on Delay Time
9 ns
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
600 V
Maximum Gate Source Voltage
30 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD03N60ZT4G
Manufacturer:
ON
Quantity:
2 500
Company:
Part Number:
NDD03N60ZT4G
Manufacturer:
ON Semiconductor
Quantity:
336
Company:
Part Number:
NDD03N60ZT4G
Manufacturer:
ON
Quantity:
12 500
3. Insertion mounted
4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).
5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DYNAMIC CHARACTERISTICS
RESISTIVE SWITCHING CHARACTERISTICS
SOURCE−DRAIN DIODE CHARACTERISTICS (T
Junction−to−Case (Drain)
Junction−to−Ambient Steady State
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature
Drain−to−Source Leakage Current
Gate−to−Source Forward Leakage
Static Drain−to−Source
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain (“Miller”) Charge
Gate Resistance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Coefficient
On−Resistance
Characteristic
Parameter
(T
V
J
DS
= 25°C unless otherwise noted)
I
S
= 600 V, V
V
V
V
V
V
V
V
V
= 3.0 A, di/dt = 100 A/ms
V
DD
DD
I
DS
C
S
DS
GS
Reference to 25°C,
GS
DS
GS
GS
Test Conditions
= 3.0 A, V
= 25°C unless otherwise noted)
= 300 V, I
= 300 V, I
= 25 V, V
= V
= 0 V, V
V
= 10 V, I
= 15 V, I
= 10 V, R
f = 1.0 MHz
= 0 V, I
V
I
GS
(Note 3) NDD03N60Z−1
D
GS
GS
http://onsemi.com
= 1 mA
(Note 4) NDD03N60Z
(Note 3) NDP03N60Z
(Note 3) NDF03N60Z
GS
= ±20 V
= 10 V
, I
D
D
DD
= 0 V
D
D
GS
D
D
GS
= 1 mA
G
= 50 mA
= 1.2 A
= 1.5 A
= 3.0 A,
= 3.0 A,
= 30 V
= 5 W
= 0 V
= 0 V,
NDD03N60Z
NDP03N60Z
NDF03N60Z
2
150°C
25°C
DBV
Symbol
Symbol
R
V
BV
R
t
t
R
I
C
I
DS(on)
DT
GS(th)
C
C
V
g
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
R
qJC
qJA
t
oss
t
FS
rss
t
SD
DSS
iss
rr
gs
gd
r
f
DSS
g
g
rr
J
/
Min
600
3.0
Value
Typ
312
265
1.6
5.0
2.0
0.6
3.3
2.0
2.5
6.1
6.0
0.9
51
51
40
80
39
12
16
10
8
9
8
Max
±10
3.6
4.5
1.6
50
1
°C/W
V/°C
Unit
Unit
mA
mA
pF
nC
mC
ns
ns
W
W
V
V
S
V