NDD03N60Z-1G ON Semiconductor, NDD03N60Z-1G Datasheet - Page 3
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NDD03N60Z-1G
Manufacturer Part Number
NDD03N60Z-1G
Description
MOSFET N-CH 600V IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NDF03N60ZG.pdf
(10 pages)
Specifications of NDD03N60Z-1G
Package / Case
IPak, TO-251 (2 straight leads + tab)
Mounting Type
Through Hole
Power - Max
61W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
12nC @ 10V
Vgs(th) (max) @ Id
4.5V @ 50µA
Current - Continuous Drain (id) @ 25° C
2.6A
Drain To Source Voltage (vdss)
600V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.6 Ohm @ 1.2A, 10V
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.3 Ohms
Forward Transconductance Gfs (max / Min)
2 S
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
1.65 A
Power Dissipation
61 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
12 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON
Quantity:
2 700
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON Semiconductor
Quantity:
40
Company:
Part Number:
NDD03N60Z-1G
Manufacturer:
ON
Quantity:
12 500
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
0.0
5.5
Figure 3. On−Region versus Gate−to−Source
V
I
D
GS
Figure 5. On−Resistance Variation with
6.0
−25
Figure 1. On−Region Characteristics
= 1.2 A
V
V
= 10 V
DS
GS
T
5.0
J
, DRAIN−TO−SOURCE VOLTAGE (V)
6.5
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
V
GS
7.0
= 10 V
25
Temperature
10.0
7.0 V
Voltage
7.5
50
8.0
15.0
75
8.5
6.0 V
TYPICAL CHARACTERISTICS
5.5 V
5.0 V
100
9.0
T
I
6.5 V
20.0
D
J
= 1.2 A
= 25°C
http://onsemi.com
125
9.5
150
10.0
25.0
3
5.00
4.75
4.50
4.25
4.00
3.75
3.50
3.25
3.00
1.15
1.10
1.05
1.00
0.95
0.90
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
−50
0.0
3
I
Figure 6. BV
V
V
D
T
GS
DS
T
J
= 1 mA
−25
Figure 4. On−Resistance versus Drain
J
= 25°C
0.5
= 10 V
= 25 V
= 150°C
4
V
Figure 2. Transfer Characteristics
GS
T
J
, GATE−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
0
Current and Gate Voltage
1.0
I
5
D
DSS
, DRAIN CURRENT (A)
25
Variation with Temperature
1.5
T
6
J
50
= −55°C
T
J
2.0
7
= 25°C
75
2.5
8
100
125
3.0
9
150
3.5
10