NTD20P06LT4G ON Semiconductor, NTD20P06LT4G Datasheet - Page 4
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NTD20P06LT4G
Manufacturer Part Number
NTD20P06LT4G
Description
MOSFET P-CH 60V 15.5A DPAK
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Specifications of NTD20P06LT4G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 7.5A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
15.5A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
26nC @ 5V
Input Capacitance (ciss) @ Vds
1190pF @ 25V
Power - Max
65W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.15 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
17.5 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
15.5 A
Power Dissipation
65000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.15Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Drain Current (max)
15.5A
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD20P06LT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
TDK
Quantity:
30 000
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
ON
Quantity:
12 500
Company:
Part Number:
NTD20P06LT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD20P06LT4G
Manufacturer:
ON/安森美
Quantity:
20 000
1000
100
10
1
1
V
I
V
Figure 9. Resistive Switching Time Variation
D
DD
GS
= −15 A
= −30 V
= −5 V
t
d(off)
R
Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge
versus Gate Resistance
g
t
F
, GATE RESISTANCE (W)
t
d(on)
t
R
2400
2200
2000
1800
1600
1400
1200
1000
6.25
3.75
1.25
800
600
400
200
10
7.5
5.0
2.5
0
0
0
−10
I
D
C
V
C
iss
V
DS
Q
= −15 A
rss
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
DS
gs
= 0 V
−5
Figure 7. Capacitance Variation
−V
Q
GS
4
g
, TOTAL GATE CHARGE (nC)
0
http://onsemi.com
−V
V
GS
DS
VOLTAGE (V)
Q
Q
C
100
C
C
5
= 0 V
GD
G
rss
iss
oss
4
8
10
20
15
10
5
0
0
V
T
J
GS
15
= 25°C
12
Figure 10. Diode Forward Voltage versus
= 0 V
0.25
T
T
−V
J
J
SD
= 25°C
= 25°C
20
, SOURCE−TO−DRAIN VOLTAGE (V)
V
GS
0.5
16
25
60
50
40
30
20
10
0
0.75
Current
1
1.25
1.5
1.75