NTD25P03LT4G ON Semiconductor, NTD25P03LT4G Datasheet - Page 3
![MOSFET P-CH 30V 25A DPAK](/photos/5/30/53089/dpak_369c_sml.jpg)
NTD25P03LT4G
Manufacturer Part Number
NTD25P03LT4G
Description
MOSFET P-CH 30V 25A DPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD25P03LT4G.pdf
(9 pages)
Specifications of NTD25P03LT4G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
80 mOhm @ 25A, 5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
1260pF @ 25V
Power - Max
75W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.051 Ohms
Forward Transconductance Gfs (max / Min)
13 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
- 25 A
Power Dissipation
75 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD25P03LT4GOS
NTD25P03LT4GOS
NTD25P03LT4GOSTR
NTD25P03LT4GOS
NTD25P03LT4GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTD25P03LT4G
Manufacturer:
ON
Quantity:
15 000
Company:
Part Number:
NTD25P03LT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTD25P03LT4G
Manufacturer:
ON/安森美
Quantity:
20 000
0.25
0.15
0.05
50
40
30
20
10
0.3
0.2
0.1
0
1.6
1.4
1.2
0.8
0.6
0
0
1
−50
0
Figure 3. On−Resistance versus Drain Current
−V
V
5
GS
7 V
Figure 1. On−Region Characteristics
DS
−25
I
V
Figure 5. On−Resistance Variation with
D
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= −5 V
GS
V
8 V
= −12.5
1
GS
10
9 V
T
= −5 V
J
−I
= 10 V
, JUNCTION TEMPERATURE (°C)
0
D
15
, DRAIN CURRENT (AMPS)
and Temperature
2
25
20
Temperature
T = 125°C
T = 25°C
T = −40°C
TYPICAL MOSFET ELECTRICAL CHARACTERISTICS
6 V
25
50
3
30
75
35
T
100
J
4
= 25°C
40
4.5 V
3.5 V
2.5 V
5 V
4 V
3 V
125
http://onsemi.com
45
5
150
50
3
10,000
0.075
0.025
1000
0.01
0.05
100
10
50
40
30
20
10
0
0
1
0
0
Figure 4. On−Resistance versus Drain Current
Figure 6. Drain−to−Source Leakage Current
T
V
V
−V
−V
J
5
DS
GS
= 25°C
DS
GS
≥ −5 V
Figure 2. Transfer Characteristics
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
10
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
−I
D
15
, DRAIN CURRENT (AMPS)
10
and Gate Voltage
versus Voltage
T
T
20
J
3
J
V
= 150°C
= 125°C
V
GS
GS
25
15
= −5 V
= −10 V
T
J
30
= 25°C
4
T
20
J
35
= −40°C
40
T
5
J
25
= 125°C
45
30
50
6