NTTFS4840NTWG ON Semiconductor, NTTFS4840NTWG Datasheet - Page 4

MOSFET N-CH 30V 4.6A 8WDFN

NTTFS4840NTWG

Manufacturer Part Number
NTTFS4840NTWG
Description
MOSFET N-CH 30V 4.6A 8WDFN
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTTFS4840NTWG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
24 mOhm @ 20A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4.6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
10.8nC @ 10V
Input Capacitance (ciss) @ Vds
580pF @ 15V
Power - Max
840mW
Mounting Type
Surface Mount
Package / Case
8-WDFN
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
15 Ohms
Forward Transconductance Gfs (max / Min)
22 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
7.3 A
Power Dissipation
2.2 W
Maximum Operating Temperature
+ 125 C
Mounting Style
SMD/SMT
Gate Charge Qg
5.5 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
0.050
0.040
0.030
0.020
0.010
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
50
40
30
20
10
0
−50
3
0
I
V
D
GS
= 20 A
Figure 5. On−Resistance Variation with
0.5
10 V
−25
= 10 V
Figure 1. On−Region Characteristics
V
4
DS
Figure 3. On−Resistance vs. V
T
J
, DRAIN−TO−SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
0
7.5 V
5
1.5
25
Temperature
6
V
GS
2
50
T
(V)
J
= 25°C
7
2.5
75
TYPICAL CHARACTERISTICS
8
100
3
GS
V
I
T
D
GS
J
3.5
= 20 A
9
= 25°C
125
http://onsemi.com
= 5 V
4.8 V
4.6 V
4.4 V
4.2 V
4.0 V
3.6 V
3.4 V
3.3 V
3.0 V
3.8 V
4
150
10
4
10,000
0.045
0.035
0.025
0.015
1000
0.04
0.03
0.02
0.01
100
50
40
30
20
10
10
0
1.0
10
5
Figure 4. On−Resistance vs. Drain Current and
V
V
T
Figure 6. Drain−to−Source Leakage Current
GS
J
DS
= 25°C
= 0 V
≥ 10 V
V
1.5
V
Figure 2. Transfer Characteristics
DS
GS
10
, DRAIN−TO−SOURCE VOLTAGE (V)
, GATE−TO−SOURCE VOLTAGE (V)
15
I
D
2.0
, DRAIN CURRENT (A)
Gate Voltage
T
15
vs. Voltage
J
V
T
V
T
= 125°C
J
GS
J
GS
= 150°C
T
= 125°C
2.5
J
20
= 4.5 V
= 10 V
= 25°C
20
3.0
T
25
J
= −55°C
25
3.5
4.0
30
30

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