NTB30N06LT4G ON Semiconductor, NTB30N06LT4G Datasheet - Page 3

• Manufacturer Part Number: NTB30N06LT4G
• Description: MOSFET N-CH 60V 30A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB30N06LT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 15A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 88.2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 30 A
• Power Dissipation: 88200 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.046Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB30N06LT4GOS

0.06
0.04
0.02
0.08
60
50
40
30
20
10
0.1
1.8
1.6
1.4
1.2
0.8
0.6
0
0
2
1
−50
0
0
V
6 V
V
V
8 V
GS
I
V
−25
D
GS
DS
Figure 5. On−Resistance Variation with
GS
Figure 1. On−Region Characteristics
= 15 A
= 5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
= 10 V
1
= 5 V
10
Figure 3. On−Resistance versus
T
J
, JUNCTION TEMPERATURE (°C)
0
I
Gate−to−Source Voltage
T
D
, DRAIN CURRENT (AMPS)
J
= 100°C
2
20
25
T
Temperature
J
T
= 25°C
J
50
= −55°C
3
30
75
5.5 V
4
100
40
NTP30N06L, NTB30N06L
125
5
50
4.5 V
3.5 V
http://onsemi.com
150
3 V
4 V
5 V
175
6
60
3
10000
1000
0.08
0.06
0.04
0.02
100
0.1
60
50
40
30
20
10
10
0
0
1.5
0
0
Figure 4. On−Resistance versus Drain Current
V
V
Figure 6. Drain−to−Source Leakage Current
T
GS
GS
V
J
V
V
DS
= 100°C
DS
T
GS
= 0 V
= 10 V
J
10
10
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
≥ 10 V
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
= 25°C
2.5
I
D
, DRAIN CURRENT (AMPS)
20
20
and Gate Voltage
T
versus Voltage
J
3.5
T
T
T
= 100°C
T
J
J
J
T
J
= 25°C
= −55°C
= −55°C
J
= 150°C
= 100°C
30
30
4.5
40
40
5.5
50
50
6.5
60
60