NTB5412NT4G ON Semiconductor, NTB5412NT4G Datasheet

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NTB5412N, NTP5412N Power MOSFET 60 Amps, 60 Volts 2 N-Channel D PAK, TO-220 Features • Low R DS(on) • High Current Capability • Avalanche Energy Specified • These are Pb−Free Devices Applications • LED Lighting and LED Backlight Drivers • ...

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ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temper- ature Coefficient Zero Gate Voltage Drain Current Gate−Body Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Voltage Static Drain−to−Source On−Resistance Forward ...

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V 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.050 0.045 0.040 0.035 0.030 0.025 0.020 0.015 0.010 0.005 GATE−TO−SOURCE VOLTAGE ...

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C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...

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... ORDERING INFORMATION Device NTP5412NG NTB5412NT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. TYPICAL PERFORMANCE CURVES Surface−Mounted on FR4 Board using pad size 0.001 ...

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... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE ...

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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...