NTD20P06LG ON Semiconductor, NTD20P06LG Datasheet

NTD20P06LG

Manufacturer Part Number

NTD20P06LG

Description

MOSFET P-CH 60V 15.5A DPAK

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheets

1.NTD20P06LT4G.pdf (8 pages)

2.NTD20P06LG.pdf (8 pages)

Specifications of NTD20P06LG

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

150 mOhm @ 7.5A, 5V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

15.5A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

26nC @ 5V

Input Capacitance (ciss) @ Vds

1190pF @ 25V

Power - Max

65W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.13 Ohms

Forward Transconductance Gfs (max / Min)

17.5 S

Drain-source Breakdown Voltage

- 60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

- 15.5 A

Power Dissipation

65 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.15Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±20V

Output Power (max)

Not RequiredW

Frequency (max)

Not RequiredMHz

Noise Figure

Not RequireddB

Power Gain

Not RequireddB

Drain Efficiency

Not Required%

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

DPAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD20P06LG
NTD20P06LGOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD20P06LG

Manufacturer:

Quantity:

872

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD20P06LG

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTD20P06LG

Manufacturer:

Quantity:

12 500

Current page: 1 of 8
Download datasheet (113Kb)

NTD20P06L

Power MOSFET

−60 V, −15.5 A, Single P−Channel, DPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface−mounted on FR4 board using 1 in sq. pad size

2. Surface−mounted on FR4 board using the minimum recommended pad size

April, 2011 − Rev. 5

MAXIMUM RATINGS

THERMAL RESISTANCE RATINGS

Drain−to−Source Voltage

Gate−to−Source

Voltage

Continuous

Drain Current

(Note 1)

Power Dissipa-

tion (Note 1)

Pulsed Drain

Current

Operating Junction and Storage Temperature

Single Pulse Drain−to−Source Avalanche

Energy (V

L = 2.7 mH, R

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Junction−to−Case (Drain)

Junction−to−Ambient – Steady State (Note 1)

Junction−to−Ambient – Steady State (Note 2)

Withstands High Energy in Avalanche and Commutation Modes

Low Gate Charge for Fast Switching

These are Pb−Free Devices

Bridge Circuits

Power Supplies, Power Motor Controls

DC−DC Conversion

(Cu area = 1.127 in sq. [1 oz] including traces)

(Cu area = 0.412 in sq.)

= 25 V, V

= 25 W)

Parameter

Non−Repetitive

Steady State

= 5 V, I

Continuous

= 25°C unless otherwise noted)

= 10 ms

= 15 A,

v10 ms

= 25°C

Symbol

GSM

STG

DSS

qJC

qJA

−55 to

Value

−15.5

$20

$30

$50

Max

−60

175

304

260

110

2.3

°C/W

Unit

°C

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

(BR)DSS

−60 V

CASE 369D

IPAK/DPAK

STYLE 2

1 2

CASE 369C

STYLE 2

DPAK

20P06L

ORDERING INFORMATION

http://onsemi.com

130 mW @ −5.0 V

DS(on)

P−Channel

Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

MARKING DIAGRAMS

Publication Order Number:

TYP

Gate

Drain

NTD20P06L/D

(Note 1)

−15.5 A

Source

MAX

Related parts for NTD20P06LG

NTD20P06LG Summary of contents

Page 1

NTD20P06L Power MOSFET −60 V, −15.5 A, Single P−Channel, DPAK Features • Withstands High Energy in Avalanche and Commutation Modes • Low Gate Charge for Fast Switching • These are Pb−Free Devices Applications • Bridge Circuits • Power Supplies, Power ...

Page 2

ELECTRICAL CHARACTERISTICS (T Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance Drain−to−Source On−Voltage ...

Page 3

TYPICAL PERFORMANCE CURVES − − − − −V ...

Page 4

I 6.25 5.0 3.75 2.5 1. Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 1000 V = − ...

Page 5

V = − Single Pulse T = 25°C C 100 Limit DS(on) Thermal Limit Package Limit 0.1 0.1 1 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 11. Maximum Rated Forward Biased Safe Operating Area ...

Page 6

... ORDERING INFORMATION Device NTD20P06L−1G NTD20P06LG NTD20P06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Package DPAK (Pb−Free) http://onsemi.com 6 † Shipping 75 Units / Rail 75 Units / Rail 2500 / Tape & Reel ...

Page 7

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C−01 ISSUE GAUGE SEATING L2 C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6 ...

Page 8

... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...

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