NTP6413ANG ON Semiconductor, NTP6413ANG Datasheet - Page 4

• Manufacturer Part Number: NTP6413ANG
• Description: MOSFET N-CH 100V 42A TO-220AB
• Manufacturer: ON Semiconductor

Specifications of NTP6413ANG

• Package / Case: TO-220-3 (Straight Leads)
• Mounting Type: Through Hole
• Power - Max: 136W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 51nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 42A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 42A, 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
4000
3000
2000
1000
1000
100
100
0.1
10
10
1
0
1
0
1
1
C
V
SINGLE PULSE
T
V
V
Figure 9. Resistive Switching Time Variation
rss
I
C
Figure 11. Maximum Rated Forward Biased
GS
DS
GS
D
10
= 25°C
= 42 A
= 10 V
= 80 V
= 10 V
t
t
V
d(on)
V
d(off)
DS
DS
Figure 7. Capacitance Variation
20
t
t
, DRAIN−TO−SOURCE VOLTAGE (V)
r
f
, DRAIN−TO−SOURCE VOLTAGE (V)
R
versus Gate Resistance
R
THERMAL LIMIT
PACKAGE LIMIT
G
30
Safe Operating Area
, GATE RESISTANCE (W)
DS(on)
10
40
LIMIT
C
oss
50
10
60
C
iss
100
70
100 ms
1 ms
dc
10 ms
TYPICAL CHARACTERISTICS
10 ms
T
V
80
J
GS
= 25°C
http://onsemi.com
= 0 V
90
100
100
1000
4
10
8
6
4
2
0
0
Drain−to−Source Voltage versus Total Charge
200
150
100
Q
40
30
20
10
50
gs
0
0
0.4
V
25
Figure 8. Gate−to−Source Voltage and
DS
Figure 12. Maximum Avalanche Energy versus
V
T
J
GS
Figure 10. Diode Forward Voltage versus
10
= 25°C
Q
T
= 0 V
V
g
J
0.5
50
, TOTAL GATE CHARGE (nC)
SD
, STARTING JUNCTION TEMPERATURE
Starting Junction Temperature
, SOURCE−TO−DRAIN VOLTAGE (V)
20
Q
0.6
75
gd
Q
T
Current
30
0.7
100
V
0.8
125
40
GS
T
I
D
J
= 25°C
= 42 A
I
D
0.9
150
= 56 A
50
100
80
60
40
20
0
175
1.0