IRFP9140 Vishay, IRFP9140 Datasheet - Page 2

• Manufacturer Part Number: IRFP9140
• Description: MOSFET P-CH 100V 21A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP9140

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 180W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 21 A
• Power Dissipation: 180 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFP9140

IRFP9140, SiHFP9140
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
www.vishay.com
2
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
R
R
t
t
R
I
I
C
V
DS(on)
C
C
V
GS(th)
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
Q
DS
g
L
L
t
I
SM
t
thCS
thJA
thJC
oss
t
t
on
DS
SD
iss
rss
S
rr
fs
gs
gd
D
r
f
S
rr
g
/T
J
T
Between lead,
6 mm (0.25") from
package and center of
die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
J
V
R
GS
GS
= 25 °C, I
T
DS
G
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= - 10 V
= - 10 V
= 9.1 Ω, R
= 25 °C, I
= - 80 V, V
V
V
V
V
V
DS
DS
f = 1.0 MHz, see fig. 5
DD
DS
TYP.
GS
0.24
TEST CONDITIONS
-
-
= - 50 V, I
= V
= - 100 V, V
= - 50 V, I
F
= 0 V, I
V
V
= - 19 A, dI/dt = 100 A/µs
V
GS
DS
S
GS
D
GS
GS
= - 21 A, V
I
= 2.4 Ω, see fig. 10
= ± 20 V
= - 25 V,
, I
D
= 0 V,
D
D
= 0 V, T
= - 19 A, V
see fig. 6 and 13
= - 250 µA
= - 250 µA
D
D
I
= - 13 A
= - 19 A,
GS
D
D
= - 13 A
= - 1 mA
= 0 V
GS
J
G
G
= 150 °C
DS
= 0 V
b
= - 80 V,
b
MAX.
D
S
0.83
b
D
S
b
40
b
-
b
- 100
MIN.
- 2.0
6.2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0005-Rev. A, 19-Jan-09
Document Number: 91238
- 0.087
TYP.
1400
0.35
590
140
130
5.0
16
73
34
57
13
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
MAX.
± 100
- 100
- 500
- 4.0
0.20
- 5.0
0.70
- 21
- 84
S
260
61
14
29
-
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
V/°C
)
nA
µA
nC
nH
µC
pF
ns
ns
Ω
V
V
S
A
V