IRFZ48 Vishay, IRFZ48 Datasheet - Page 2

• Manufacturer Part Number: IRFZ48
• Description: MOSFET N-CH 60V 50A TO-220AB
• Manufacturer: Vishay

Specifications of IRFZ48

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2400pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFZ48S, IRFZ48L, SiHFZ48S, SiHFZ48L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
c. Uses IRFZ48/SiHFZ48 data and test conditions.
d. Calculated continuous current based on maximum allowable junction temperature.
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2
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
= 25 °C, unless otherwise noted)
a
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
V
DS(on)
C
Q
Q
V
GS(th)
d(off)
I
GSS
DSS
d(on)
Q
DS
g
Q
t
L
SM
t
I
t
t
on
DS
oss
SD
thJA
thJC
iss
rss
S
gs
gd
rr
fs
r
f
S
g
rr
/T
J
T
Between lead, and center of die contact
MOSFET symbol
showing the
integral reverse
p - n junction diode
V
V
R
J
GS
GS
g
= 25 °C, I
V
Intrinsic turn-on time is negligible (turn-on is dominated by L
T
= 9.1 , R
DS
Reference to 25 °C, I
= 10 V
= 10 V
J
= 25 °C, I
= 48 V, V
f = 1.0 MHz, see fig. 5
V
V
V
V
V
TYP.
TEST CONDITIONS
DS
GS
DS
DS
DD
-
-
F
= V
= 0 V, I
= 25 V, I
V
= 60 V, V
= 30 V, I
= 72 A, dI/dt = 100 A/μs
D
V
V
GS
DS
= 0.34 , see fig. 10
S
GS
GS
GS
I
D
= 72 A, V
= ± 20 V
see fig. 6 and 13
= 25 V,
, I
= 0 V, T
= 0 V,
= 72 A, V
D
D
D
D
= 250 μA
= 250 μA
GS
I
= 43 A
D
= 72 A,
D
= 0 V
= 43 A
J
GS
= 1 mA
= 150 °C
DS
G
b
= 0 V
c
= 48 V,
b
c
b, c
b
MAX.
b, c
D
S
0.8
40
b, c
MIN.
2.0
60
27
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S10-2695-Rev. B, 29-Nov-10
Document Number: 90377
0.060
TYP.
2400
1300
190
250
210
250
120
500
8.1
7.5
-
-
-
-
-
-
-
-
-
-
-
-
-
°C / W
UNIT
MAX.
± 100
0.018
250
110
290
180
800
50
4.0
2.0
S
25
29
36
-
-
-
-
-
-
-
-
-
-
-
and L
c
D
UNIT
V/°C
)
nC
nH
μC
nA
μA
pF
ns
ns

S
A
V
V
V