IRF820S Vishay, IRF820S Datasheet
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IRF820S
Specifications of IRF820S
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IRF820S Summary of contents
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... IRF820STRL SiHF820STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 2.5 A (see fig. 12 ≤ 150 °C. J IRF820S, SIHF820S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF820STRRPbF a a SiHF820STR- IRF820STRR a a SiHF820STR SYMBOL LIMIT V 500 DS V ± ...
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... IRF820S, SIHF820S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Drain-to-Source Voltage ( 91060_02 Fig Typical Output Characteristics, T Document Number: 91060 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width °C C 91060_03 = 25 ° µs Pulse Width T = 150 ° 91060_04 = 150 °C C IRF820S, SIHF820S Vishay Siliconix ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 3 ...
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... IRF820S, SIHF820S Vishay Siliconix 800 MHz iss rss 600 oss ds C 400 C 200 Drain-to-Source Voltage ( 91060_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 2 250 100 Total Gate Charge (nC) 91060_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 91060_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91060 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF820S, SIHF820S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF820S, SIHF820S Vishay Siliconix Vary t to obtain p required I AS D.U 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91060_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 500 Top ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF820S, SIHF820S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...