IRF830S Vishay, IRF830S Datasheet
IRF830S
Specifications of IRF830S
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IRF830S Summary of contents
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... SiHF830S-E3 IRF830S SiHF830S = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 4.5 A (see fig. 12 ≤ 150 °C. J IRF830S, SiHF830S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263) a IRF830STRLPbF a SiHF830STL-E3 a IRF830STRL a SiHF830STL SYMBOL LIMIT V 500 DS V ± 4 2.9 ...
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... IRF830S, SiHF830S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage ...
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... Fig Typical Output Characteristics, T Document Number: 91064 S-83030-Rev. A, 19-Jan-09 4 µs Pulse Width ° 91064_03 = 25 ° µs Pulse Width T = 150 ° 91064_04 = 150 °C Fig Normalized On-Resistance vs. Temperature C IRF830S, SiHF830S Vishay Siliconix 1 10 ° 150 C ° µs Pulse Width Gate-to-Source Voltage ( Fig ...
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... IRF830S, SiHF830S Vishay Siliconix 1500 MHz iss 1250 rss oss 1000 750 500 250 Drain-to-Source Voltage ( 91064_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 250 100 Total Gate Charge (nC) 91064_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss C oss C rss 1 10 91064_07 Fig ...
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... Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91064 S-83030-Rev. A, 19-Jan-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration (s) 1 IRF830S, SiHF830S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF830S, SiHF830S Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91064_12c Fig. 12c - Maximum Avalanche Energy vs. Drain Current Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com Fig. 12b - Unclamped Inductive Waveforms 600 Top ...
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... Driver gate drive Period D = P.W. D.U.T. I waveform SD Body diode forward current dI/dt D.U.T. V waveform DS Diode recovery dV/dt Body diode forward drop Inductor current Ripple ≤ for logic level devices and 3 V drive devices GS Fig For N-Channel IRF830S, SiHF830S Vishay Siliconix + + P.W. Period www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...