NDF0610 Fairchild Semiconductor, NDF0610 Datasheet
NDF0610
Manufacturer Part Number
NDF0610
Description
MOSFET P-CH 60V 180MA TO92
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDF0610.pdf
(5 pages)
Specifications of NDF0610
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
180mA
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
1.43nC @ 10V
Input Capacitance (ciss) @ Vds
60pF @ 25V
Power - Max
800mW
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NDF0610
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
____________________________________________________________________________________________
Absolute Maximum Ratings
Symbol
V
V
V
I
P
T
T
THERMAL CHARACTERISTICS
R
© 1998 Fairchild Semiconductor Corporation
D
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been designed to minimize on-state resistance, provide rugged
and reliable performance and fast switching. They can be
used, with a minimum of effort, in most applications requiring
up to 180mA DC and can deliver pulsed currents up to 1A.
This product is particularly suited to low voltage applications
requiring a low current high side switch.
General Description
J
L
DSS
DGR
GSS
D
NDF0610 / NDS0610
P-Channel Enhancement Mode Field Effect Transistor
,T
JA
STG
S
G
Parameter
Drain-Source Voltage
Drain-Gate Voltage (R
Gate-Source Voltage - Continuous
Drain Current - Continuous
Maximum Power Dissipation T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/16" from case for 10 seconds
Thermal Resistance, Junction-to-Ambient
D
NDF0610
- Nonrepetitive (t
TO-92
- Pulsed
Derate above 25°C
GS
< 1 M )
P
< 50 µs)
A
T
= 25°C
A
= 25°C unless otherwise noted
D
NDS0610
SOT-23
G
NDF0610
-0.18
Features
200
0.8
5
-0.18 and -0.12A, -60V. R
Voltage controlled p-channel small signal switch
High density cell design for low R
TO-92 and SOT-23 packages for both through hole and
surface mount applications
High saturation current
S
-55 to 150
±20
±30
300
-60
-60
-1
G
NDS0610
DS(ON)
-0.12
0.36
350
2.9
= 10
DS(ON)
S
D
April 1995
NDS0610.SAM
mW/
Units
°C/W
W
°C
°C
V
V
V
V
A
o
C
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NDF0610 Summary of contents
Page 1
... NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching ...
Page 2
ELECTRICAL CHARACTERISTICS (T Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Zero Gate Voltage Drain Current I DSS Gate - Body Leakage, Forward I GSSF Gate - Body Leakage, Reverse I GSSR ON CHARACTERISTICS (Note 1) Gate Threshold Voltage ...
Page 3
Typical Electrical Characteristics -1 -10V GS -1.2 -1 -0.8 -0.6 -0.4 -0 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 1 -0. -10V GS 1.4 ...
Page 4
Typical Electrical Characteristics 1. -10µA D 1.1 1.05 1 0.95 0.9 -50 - JUNCTION TEMPERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...
Page 5
... Figure 13. NDS0610 (SOT-23) Maximum Safe 0.01 0 TIME (sec) 1 Figure 14. NDF0610 (TO-92) Transient Thermal Response Curve. 0.01 0 TIME (sec) 1 Figure 15. NDS0610 (SOT-23) Transient Thermal Response Curve -10V G S SINGLE PULSE T = 25° DRAIN-SOURCE VOLTAGE (V) ...