IRF530S Vishay, IRF530S Datasheet - Page 4

• Manufacturer Part Number: IRF530S
• Description: MOSFET N-CH 100V 14A D2PAK
• Manufacturer: Vishay

Specifications of IRF530S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 160 mOhm @ 8.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 670pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF530S

IRF530S, SiHF530S
Vishay Siliconix
www.vishay.com
4
91020_05
91020_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
1400
1200
1000
800
600
400
200
20
16
12
0
8
4
0
10
0
0
I
D
= 14 A
V
DS ,
5
Q
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 20 V
10
V
C
C
C
GS
iss
rss
oss
V
= C
= 0 V, f = 1 MHz
= C
= C
DS
10
gs
gd
= 50 V
ds
15
1
+ C
C
+ C
C
C
rss
V
iss
oss
gd
DS
gd
For test circuit
see figure 13
, C
= 80 V
ds
20
Shorted
25
91020_07
91020_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
0.1
Fig. 8 - Maximum Safe Operating Area
10
0
1
1
3
2
5
2
5
2
5
2
5
2
0.4
0.1
175
2
°
V
V
C
SD
5
DS
Operation in this area limited
0.8
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
1
2
25
T
T
Single Pulse
°
C
J
by R
C
= 175 °C
5
= 25 °C
1.2
10
DS(on)
S-82996-Rev. A, 19-Jan-09
Document Number: 91020
2
5
1.6
10
100
1
10
10
2
V
ms
GS
2
ms
µs
µs
= 0 V
5
2.0
10
3