IRF610S Vishay, IRF610S Datasheet
IRF610S
Specifications of IRF610S
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IRF610S Summary of contents
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... IRF610STRL SiHF610STL = 25 °C, unless otherwise noted ° 100 ° ° °C A for Ω 3.3 A (see fig. 12 ≤ 150 °C. J IRF610S, SiHF610S Vishay Siliconix device design, low on-resistance 2 D PAK (TO-263 IRF610STRRPbF a a SiHF610STR- IRF610STRR a a SiHF610STR SYMBOL LIMIT V 200 DS V ± ...
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... IRF610S, SiHF610S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient c (PCB Mount) Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) SPECIFICATIONS °C, unless otherwise noted J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...
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... C 3.5 3.0 2.5 2.0 4.5 V 1.5 1.0 0.5 20 µs Pulse Width T = 150 ° 91024_04 Fig Normalized On-Resistance vs. Temperature = 150 °C C IRF610S, SiHF610S Vishay Siliconix 20 µs Pulse Width Gate-to-Source Voltage ( Fig Typical Transfer Characteristics 100 120 140 160 T Junction Temperature (° ...
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... IRF610S, SiHF610S Vishay Siliconix 300 MHz iss gs 250 rss oss 200 C 150 C 100 Drain-to-Source Voltage ( 91024_05 Fig Typical Capacitance vs. Drain-to-Source Voltage 3 100 Total Gate Charge (nC) 91024_06 G Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com Shorted iss oss rss 10 1 91024_07 Fig Typical Source-Drain Diode Forward Voltage ...
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... Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91024 S09-0071-Rev. A, 02-Feb-09 125 150 Single Pulse (Thermal Response Rectangular Pulse Duration ( IRF610S, SiHF610S Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit ...
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... IRF610S, SiHF610S Vishay Siliconix Charge Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 140 120 100 100 Starting T , Junction Temperature (°C) 91024_12c J Fig. 12c - Maximum Avalanche Energy vs. Drain Current I D Top 1.5 A 2.1 A Bottom 3.3 A 125 150 Current regulator Same type as D.U.T. ...
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... SD • D.U.T. - device under test P.W. Period D = Period P.W. waveform SD Body diode forward current dI/dt waveform DS Diode recovery dV/dt Body diode forward drop Ripple ≤ for logic level and 3 V drive devices Fig For N-Channel IRF610S, SiHF610S Vishay Siliconix + + www.vishay.com 7 ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...