IRF9520S Vishay, IRF9520S Datasheet - Page 5

• Manufacturer Part Number: IRF9520S
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: Vishay

Specifications of IRF9520S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 4.1A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 390pF @ 25V
• Power - Max: 3.7W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520S

Document Number: 91075
S09-0017-Rev. A, 19-Jan-09
91075_09
Fig. 9 - Maximum Drain Current vs. Case Temperature
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
91075_11
25
10
0.1
10
50
-2
1
10
T
C
-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
, Case Temperature (°C)
75
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
-4
125
Single Pulse
(Thermal Response)
150
175
10
t
-3
1
, Rectangular Pulse Duration (s)
10
-2
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
0.1
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
IRF9520S, SiHF9520S
GS
t
d(on)
V
Notes:
1. Duty Factor, D = t
2. Peak T
DS
t
r
1
j
= P
D.U.T.
P
DM
DM
R
Vishay Siliconix
D
x Z
t
d(off)
t
1
1
thJC
/t
2
t
+ T
t
2
f
+
-
C
www.vishay.com
10
V
DD
5