IRF9620S Vishay, IRF9620S Datasheet - Page 6
![MOSFET P-CH 200V 3.5A D2PAK](/photos/5/29/52982/vishay-d2pak_sml.jpg)
IRF9620S
Manufacturer Part Number
IRF9620S
Description
MOSFET P-CH 200V 3.5A D2PAK
Manufacturer
Vishay
Datasheet
1.IRF9620S.pdf
(7 pages)
Specifications of IRF9620S
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
3W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRF9620S
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IRF9620S, SiHF9620S
Vishay Siliconix
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91083.
www.vishay.com
6
- 10 V
V
G
Fig. 18a - Basic Gate Charge Waveform
Q
GS
Charge
Q
Q
GD
G
Re-applied
voltage
Reverse
recovery
current
+
R
-
Compliment N-Channel of D.U.T. for driver
D.U.T.
G
*
Driver gate drive
D.U.T. I
D.U.T. V
Inductor current
V
GS
P.W.
= - 5 V for logic level and - 3 V drive devices
SD
DS
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Ripple ≤ 5 %
Body diode forward drop
Fig. 19 - For P-Channel
Period
Body diode forward
+
-
• dV/dt controlled by R
• I
• D.U.T. - device under test
SD
Diode recovery
current
controlled by duty factor "D"
Circuit layout considerations
dV/dt
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
dI/dt
D =
-
G
Period
P.W.
+
12 V
V
Fig. 18b - Gate Charge Test Circuit
GS
V
V
I
Same type as D.U.T.
SD
GS
DD
Current regulator
= - 10 V*
+
-
0.2 µF
V
DD
- 3 mA
Current sampling resistors
50 kΩ
0.3 µF
I
G
S09-0015-Rev. A, 19-Jan-09
Document Number: 91083
D.U.T.
I
D
+
-
V
DS