IRF9640S Vishay, IRF9640S Datasheet - Page 3

• Manufacturer Part Number: IRF9640S
• Description: MOSFET P-CH 200V 11A D2PAK
• Manufacturer: Vishay

Specifications of IRF9640S

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1200pF @ 25V
• Power - Max: 3W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9640S

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 91087
S09-0046-Rev. A, 19-Jan-09
91087_01
91087_02
Fig. 2 - Typical Output Characteristics, T
Fig. 1 - Typical Output Characteristics, T
10
10
10
10
1
0
1
0
10
10
Top
Bottom
0
Top
Bottom
0
- V
- V
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
DS
- 15 V
- 10 V
- 8.0 V
- 7.0 V
- 6.0 V
- 5.5 V
- 5.0 V
- 4.5 V
V
DS ,
V
GS
GS
, Drain-to-Source Voltage (V)
Drain-to-Source Voltage (V)
10
10
1
1
20 µs Pulse Width
T
20 µs Pulse Width
T
C
C
=
=
150 °C
25 °C
C
- 4.5 V
C
- 4.5 V
= 150 °C
= 25 °C
91087_03
91087_04
Fig. 4 - Normalized On-Resistance vs. Temperature
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1
0
- 60 - 40 - 20 0
4
Fig. 3 - Typical Transfer Characteristics
I
V
D
GS
= - 11 A
= - 10 V
- V
IRF9640S, SiHF9640S
25
5
T
GS ,
J ,
°
C
Junction Temperature (°C)
Gate-to-Source Voltage (V)
6
20 40 60 80 100 120 140 160
150
7
°
Vishay Siliconix
C
20 µs Pulse Width
V
DS
8
= -
50 V
www.vishay.com
9
10
3