IRFBC20S Vishay, IRFBC20S Datasheet - Page 2

• Manufacturer Part Number: IRFBC20S
• Description: MOSFET N-CH 600V 2.2A D2PAK
• Manufacturer: Vishay

Specifications of IRFBC20S

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFBC20S

IRFBC20S, SiHFBC20S, IRFBC20L, SiHFBC20L
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRFBC20, SiHFBC20 data and test conditions.
www.vishay.com
2
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
Temperature Coefficient
a
J
a
= 25 °C, unless otherwise noted
SYMBOL
SYMBOL
ΔV
R
V
t
t
I
I
C
R
V
C
V
R
GS(th)
DS(on)
C
Q
Q
d(on)
d(off)
I
GSS
DSS
Q
g
Q
t
DS
L
SM
I
t
t
on
DS
oss
t
SD
thJA
thJC
iss
rss
S
rr
gd
fs
gs
r
f
S
g
rr
/T
J
T
MOSFET symbol
showing the
integral reverse
p - n junction diode
Between lead, and center of die contact
V
V
J
R
V
GS
GS
= 25 °C, I
G
DS
T
Intrinsic turn-on time is negligible (turn-on is dominated by L
Reference to 25 °C, I
J
= 18 Ω, R
= 10 V
= 10 V
= 25 °C, I
= 480 V, V
V
V
V
V
V
f = 1.0 MHz, see fig. 5
TYP.
DD
TEST CONDITIONS
DS
DS
GS
DS
-
-
F
= 600 V, V
= 300 V, I
= V
= 50 V, I
= 0 V, I
V
= 2.0 A, dI/dt = 100 A/µs
V
D
V
GS
DS
S
GS
I
GS
= 150 Ω, see fig. 10
GS
D
= 2.2 A, V
= ± 20 V
see fig. 6 and 13
, I
= 25 V,
= 2.0 A, V
= 0 V,
= 0 V, T
D
D
D
= 250 µA
D
= 250 µA
I
GS
= 1.3 A
D
= 2.0 A,
= 1.3 A
D
= 0 V
= 1 mA
GS
J
DS
G
= 125 °C
= 0 V
c
c
= 360 V,
b
c
b, c
MAX.
b
b, c
D
S
2.5
40
b, c
MIN.
600
2.0
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
S09-0045-Rev. A, 19-Jan-09
Document Number: 91107
TYP.
0.88
0.67
350
290
8.6
7.5
48
10
23
30
25
-
-
-
-
-
-
-
-
-
-
-
-
-
UNIT
°C/W
± 100
MAX.
S
100
500
580
4.0
4.4
3.0
8.9
2.2
8.0
1.6
1.3
18
-
-
-
-
-
-
-
-
-
-
-
and L
D
UNIT
)
V/°C
nA
µA
nC
nH
µC
pF
ns
ns
V
V
Ω
S
A
V