IRF630STRL Vishay, IRF630STRL Datasheet

IRF630STRL

Manufacturer Part Number

IRF630STRL

Description

MOSFET N-CH 200V 9A D2PAK

Manufacturer

Vishay

Datasheets

1.IRF630S.pdf (11 pages)

2.IRF630S.pdf (10 pages)

Specifications of IRF630STRL

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 5.4A, 10V

Drain To Source Voltage (vdss)

200V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

43nC @ 10V

Input Capacitance (ciss) @ Vds

800pF @ 25V

Power - Max

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Current page: 1 of 10
Download datasheet (197Kb)

Note

a. See device orientation.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91032

S11-1047-Rev. C, 30-May-11

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

DS(on)

(Max.) (nC)

(nC)

(V)

(nC)

()

PAK (TO-263)

= 10 V

N-Channel MOSFET

Single

SiHF630S-GE3

IRF630SPbF

SiHF630S-E3

200

7.0

This document is subject to change without notice.

PAK (TO-263)

= 25 °C, unless otherwise noted)

Power MOSFET

0.40

at 10 V

= 25 °C

= 100 °C

= 25 °C

FEATURES

• Halogen-free According to IEC 61249-2-21

• Surface Mount

• Available in Tape and Reel

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effectiveness.

The D

accommodating die sizes up to HEX-4. It provides the

highest

on-resistance in any existing surface mount package. The

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface mount application.

Definition

PAK is suitable for high current applications because of

SiHF630STRL-GE3

IRF630STRLPbF

SiHF630STL-E3

PAK (TO-263)

PAK is a surface mount power package capable of

power

SYMBOL

dV/dt

device

capability

design,

IRF630S, SiHF630S

and

LIMIT

0.025

± 20

0.59

200

250

SiHF630STRR-GE3

IRF630STRRPbF

SiHF630STR-E3

9.0

5.7

9.0

7.4

3.0

5.0

low

www.vishay.com/doc?91000

PAK (TO-263)

Vishay Siliconix

the

on-resistance

lowest

www.vishay.com

UNIT

W/°C

V/ns

possible

and

Related parts for IRF630STRL

Related keywords

irf630
irf634
irf630n
irf630s
irf630b
irf630fp
IRF630STRL datasheet
IRF630STRL data sheet
IRF630STRL pdf datasheet
IRF630STRL component
IRF630STRL part
IRF630STRL distributor
IRF630STRL RoHS
IRF630STRL datasheet download