SSH22N50A Fairchild Semiconductor, SSH22N50A Datasheet

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SSH22N50A

Manufacturer Part Number
SSH22N50A
Description
MOSFET N-CH 500V 22A TO-3P
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of SSH22N50A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
250 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
236nC @ 10V
Input Capacitance (ciss) @ Vds
5120pF @ 25V
Power - Max
278W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
Q1150235

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SSH22N50A
Manufacturer:
IXYS
Quantity:
20 000
Part Number:
SSH22N50A
Manufacturer:
SEC
Quantity:
20 000
©1999 Fairchild Semiconductor Corporation
Thermal Resistance
FEATURES
Absolute Maximum Ratings
T
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10 A (Max.) @ V
Lower R
Symbol
Symbol
J
R
dv/dt
R
R
V
V
E
E
I
I
, T
P
I
T
DM
AR
DSS
D
GS
AR
AS
JC
CS
JA
D
L
STG
DS(ON)
Drain-to-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
: 0.197
(Typ.)
Junction-to-Ambient
Junction-to-Case
Characteristic
Characteristic
Case-to-Sink
C
=25 C)
C
C
DS
=25 C)
=100 C)
= 500V
(1)
(2)
(1)
(1)
(3)
Typ.
0.24
--
--
- 55 to +150
SSH22N50A
Value
2151
13.4
27.8
2.22
300
500
278
BV
R
I
3.5
22
88
22
TO-3P
1
1.Gate 2. Drain 3. Source
D
30
2
DS(on)
3
DSS
= 22 A
0.45
Max.
40
--
= 0.25
= 500 V
Units
Units
W/ C
V/ns
C/W
mJ
mJ
W
V
A
A
V
A
C
Rev. B

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SSH22N50A Summary of contents

Page 1

... T J STG Storage Temperature Range Maximum Lead Temp. for Soldering T L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic R Junction-to-Case JC R Case-to-Sink CS R Junction-to-Ambient JA ©1999 Fairchild Semiconductor Corporation SSH22N50A BV DSS R DS(on TO-3P = 500V 1.Gate 2. Drain 3. Source Value 500 = =100 C) 13 ...

Page 2

... SSH22N50A Electrical Characteristics (T Symbol Characteristic BV Drain-Source Breakdown Voltage DSS BV/ T Breakdown Voltage Temp. Coeff Gate Threshold Voltage GS(th) Gate-Source Leakage , Forward I GSS Gate-Source Leakage , Reverse I Drain-to-Source Leakage Current DSS Static Drain-Source R DS(on) On-State Resistance g Forward Transconductance fs C Input Capacitance iss C Output Capacitance ...

Page 3

... Drain-Source Voltage [V] DS Fig 3. On-Resistance vs. Drain Current Dra in C urre nt [A] D Fig 5. Capacitance vs. Drain-Source Voltage iss oss iss rss oss rss Drain-Source Voltage [V] DS SSH22N50A Fig 2. Transfer Characteristics Gate-Source Voltage [V] GS Fig 4. Source-Drain Diode Forward Voltage our ce - Vol Fig 6. Gate Charge vs. Gate-Source Voltage ...

Page 4

... SSH22N50A Fig 7. Breakdown Voltage vs. Temperature Junction Temperature [ C] J Fig 9. Max. Safe Operating Area DS(on Drain-Source Voltage [V] DS D=0 0.2 0.1 0.05 0. 0.01 10 single pulse - Square Wave Pulse Duration 1 Fig 8. On-Resistance vs. Temperature Junction Temperature [ J Fig 10. Max. Drain Current vs. Case Temperature Case Temperature [ c Fig 11 ...

Page 5

... Fig 13. Resistive Switching Test Circuit & Waveforms R V out DUT 10V Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms Vary t to obtain required peak DUT 10V 10V Resistor L V out 90 0.5 rated 10 d(on ---- DSS SSH22N50A Charge t d(off off BV DSS 2 -------------------- DSS (t) DS Time t p ...

Page 6

... SSH22N50A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT I S Driver Driver ) I , Body Diode Forward Current DUT ) DUT ) + Same Type as DUT dv/dt controlled controlled by Duty Factor D S Gate Pulse Width -------------------------- Gate Pulse Period di/ Body Diode Reverse Current Body Diode Recovery dv/dt ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...

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