RFD15P05SM Fairchild Semiconductor, RFD15P05SM Datasheet - Page 7

• Manufacturer Part Number: RFD15P05SM
• Description: MOSFET P-CH 50V 15A TO-252AA
• Manufacturer: Fairchild Semiconductor

Specifications of RFD15P05SM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 20V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 80W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
PSPICE Electrical Model
.SUBCKT RFP15P05 2 1 3
CA 12 8 1.6e-9
CB 15 14 1.47e-9
CIN 6 8 1.09e-9
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -73.0
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 6.73e-9
LSOURCE 3 7 6.69e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 50 16 RDSMOD 63.6e-3
RGATE 9 20 7.37
RIN 6 8 1e9
RSCL1 5 51 RSCLMOD 1e-6
RSCL2 5 50 1e3
RSOURCE 8 7 RDSMOD 46.5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.65
ESCL 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)*1e6/35,4))}
.MODEL DBDMOD D (IS = 1.27e-13 RS = 1.62e-2 TRS1 = 1.35e-3 TRS2 = -4.33e-6 CJO = 1.25e-9 TT = 7.97e-8)
.MODEL DBKMOD D (RS = 2.54e-1 TRS1 = 4.54e-3 TRS2 = -1.12e-5)
.MODEL DPLCAPMOD D (CJO = 285e-12 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -3.78 KP = 6.97 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = -4.0e-7)
.MODEL RDSMOD RES (TC1 = 5.47e-3 TC2 = 1.37e-5)
.MODEL RSCLMOD RES (TC1 = 1.9e-3 TC2 = -7.5e-6)
.MODEL RVTOMOD RES (TC1 = -3.71e-3 TC2 = -2.41e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.65 VOFF = 1.65)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.65 VOFF = 3.65)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.60 VOFF = -4.40)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.40 VOFF = 0.60)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-circuit for the Power MOSFET Featuring
Global Temperature Options; authored by William J. Hepp and C. Frank Wheatley.
REV 9/06/94
GATE
1
LGATE
9
RGATE
CA
12
20
EVTO
S1A
S1B
ESG
18
8
13
8
EGS
+
-
-
10
13
6
8
+
-
RIN
6
8
DPLCAP
14
13
RSCL2
S2A
S2B
-
VTO
EDS
6
CB
CIN
15
+
-
16
5
8
51
5
5
14
MOS1
RDRAIN
RSCL1
21
ESCL
8
MOS2
RSOURCE
EBREAK
DBREAK
RFD15P05, RFD15P05SM, RFP15P05 Rev. B
17
11
17
18
RBREAK
IT
+
-
7
LSOURCE
LDRAIN
DBODY
19
18
+
-
RVTO
VBAT
SOURCE
DRAIN
3
2