RFD16N05 Fairchild Semiconductor, RFD16N05 Datasheet - Page 4
![MOSFET N-CH 50V 16A I-PAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
RFD16N05
Manufacturer Part Number
RFD16N05
Description
MOSFET N-CH 50V 16A I-PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.RFD16N05SM9A.pdf
(8 pages)
Specifications of RFD16N05
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
47 mOhm @ 16A, 10V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 20V
Input Capacitance (ciss) @ Vds
900pF @ 25V
Power - Max
72W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RFD16N05
Manufacturer:
HARRIS
Quantity:
30 000
Company:
Part Number:
RFD16N05
Manufacturer:
FAIRCHILD
Quantity:
1 171
Part Number:
RFD16N05
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD16N05LSM
Manufacturer:
FSC
Quantity:
4 249
Part Number:
RFD16N05LSM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD16N05LSM9A
Manufacturer:
FSC
Quantity:
21 000
Part Number:
RFD16N05LSM9A
Manufacturer:
HAR
Quantity:
20 000
Part Number:
RFD16N05LSM9ACT
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
RFD16N05SM9A
Manufacturer:
Excelitas Technologies Corporation
Quantity:
1 000
Typical Performance Curves
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322.
©2003 Fairchild Semiconductor Corporation
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
100
10
50
40
30
20
10
1
0.01
0
0.5
2.0
1.5
1.0
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
0
0
-80
If R = 0
t
If R
t
AV
AV
V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
FIGURE 8. TRANSFER CHARACTERISTICS
DD
V
= (L)(I
= (L/R)ln[(I
GS
= 15V
0
STARTING T
JUNCTION TEMPERATURE
= V
-40
AS
DS
2
V
)/(1.3*RATED BV
GS
, I
T
t
AS
J
AV
D
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
= 250 A
*R)/(1.3*RATED BV
, TIME IN AVALANCHE (ms)
0.1
0
J
= 150
4
o
40
C
DSS
-55
- V
80
STARTING T
DSS
DD
o
6
C
)
1
-V
Unless Otherwise Specified (Continued)
DD
120
) +1]
o
C)
25
J
8
= 25
o
C
160
175
o
C
o
C
200
10
10
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
50
40
30
20
10
0
2.5
2.0
1.5
1.0
0.5
0
1.5
1.0
2.0
0.5
0
-80
0
-80
FIGURE 7. SATURATION CHARACTERISTICS
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
V
GS
I
D
V
= 250 A
GS
= 10V, I
RESISTANCE vs JUNCTION TEMPERATURE
VOLTAGE vs JUNCTION TEMPERATURE
-40
-40
= 20V
V
DS
T
1
T
J
, DRAIN TO SOURCE VOLTAGE (V)
D
J
, JUNCTION TEMPERATURE (
, JUNCTION TEMPERATURE (
= 16A
0
0
V
GS
= 10V
40
40
2
V
GS
80
80
RFD16N05, RFD16N05SM Rev. B1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
T
V
C
= 4.5V
GS
= 25
= 8V
120
o
120
C
o
3
o
C)
C)
V
V
GS
GS
160
160
V
GS
= 6V
= 5V
= 7V
200
200
4