RFG60P05E Fairchild Semiconductor, RFG60P05E Datasheet - Page 2

• Manufacturer Part Number: RFG60P05E
• Description: MOSFET P-CH 50V 60A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of RFG60P05E

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 450nC @ 20V
• Input Capacitance (ciss) @ Vds: 7200pF @ 25V
• Power - Max: 215W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Single Pulse Avalanche Rating (Figure 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Electrostatic Discharge Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTE:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 10V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Source to Drain Diode Voltage (Note 2)
Diode Reverse Recovery Time
1. T
2. Pulse test: pulse width ≤ 300 µ s maximum, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
Pulsed Drain Current (Note 3) (Figure 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate above 25
MIL-STD-883, Category B(2)
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
SYMBOL
C, Unless Otherwise Specified
SYMBOL
V
Q
r
V
BV
t
Q
Q
t
DS(ON)
t
d(OFF)
t
C
C
GS(TH)
RR
R
I
I
t
d(ON)
(OFF)
C
R
g(TOT)
SD
DSS
GSS
(ON)
g(-10)
g(TH)
OSS
RSS
t
θ JC
ISS
θ JA
t
DSS
F
r
I
I
I
V
V
V
V
I
V
V
(Figure 13)
V
V
V
V
(Figure 12)
SD
SD
D
D
GS
DS
DS
GS
DD
GS
GS
GS
GS
DS
= 250 µ A, V
= 60A, V
= -60A
= -60A, dI
= -50V, V
= 0.8 x Rated BV
= -25V, V
= V
= ± 20V
= -25V, I
= -10V, R
= 0V to -20V
= 0V to -10V
= 0V to -2V
TEST CONDITIONS
DS
, I
GS
D
SD
TEST CONDITIONS
D
GS
GS
GS
GS
= -10V (Figure 9)
= 250 µ A
= 30A, R
/dt = 100A/ µ s
= 0V
= 0V
= 0V, f = 1MHz
= 2.5 Ω
J,
DSS
V
R
I
g(REF)
T
DD
L
L
DGR
STG
pkg
, T
DM
= 0.83 Ω ,
= 0.67 Ω
GS
DS
SD
AS
D
D
= -40V, I
L
C
= -4mA
= 150
Refer to Peak Current Curve
D
o
C
= 60A,
Refer to UIS Curve
MIN
-
-
RFG60P05E
-55 to 175
1.43
± 20
215
300
260
-50
-50
60
2
MIN
-50
-2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
-
-
7200
1700
TYP
325
20
60
65
20
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX
-1.75
200
0.030
MAX
± 100
0.70
125
125
450
225
-25
RFG60P05E Rev. B
15
30
-4
-1
-
-
-
-
-
-
-
-
UNITS
W/
W/
kV
o
o
o
W
V
V
V
A
UNITS
C
C
C
o
o
UNITS
o
o
C
C
ns
V
C/W
C/W
µ A
µ A
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
V
V
Ω