IRF634NSPBF Vishay, IRF634NSPBF Datasheet - Page 6

• Manufacturer Part Number: IRF634NSPBF
• Description: MOSFET N-CH 250V 8A D2PAK
• Manufacturer: Vishay

Specifications of IRF634NSPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 435 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 620pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF634NSPBF

IRF634N, IRF634NL, IRF634NS, SiHF634N, SiHF634NL, SiHF634NS
Vishay Siliconix
www.vishay.com
6
91033_11
Fig. 12a - Unclamped Inductive Test Circuit
R
20 V
G
V
10
0.1
DS
10
-2
1
10
t
p
-5
0.05
0.02
0.01
D = 0.5
0.2
0.1
I
AS
D.U.T
0.01 Ω
L
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
91033_12c
15 V
Single Pulse
(Thermal Response)
10
Driver
-4
200
160
120
80
40
0
25
+
- V
A
DD
Starting T
t
1
, Rectangular Pulse Duration (s)
50
J
75
, Junction Temperature (°C)
10
100
-3
125
Top
Bottom
Fig. 12b - Unclamped Inductive Waveforms
150
I
AS
2.0 A
3.4 A
4.8 A
I
D
175
10
Notes:
1. Duty Factor, D = t
2. Peak T
-2
j
t
p
= P
P
DM
DM
x Z
t
S-82999-Rev. A, 12-Jan-09
1
Document Number: 91033
1
thJC
/t
2
V
t
+ T
DS
2
C
0.1