IRF744PBF Vishay, IRF744PBF Datasheet - Page 4

• Manufacturer Part Number: IRF744PBF
• Description: MOSFET N-CH 450V 8.8A TO-220AB
• Manufacturer: Vishay

Specifications of IRF744PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 630 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 8.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF744PBF

IRF744, SiHF744
Vishay Siliconix
www.vishay.com
4
91056_05
91056_06
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
3000
2500
2000
1500
1000
500
20
16
12
0
4
8
0
10
0
I
0
D
= 8.8 A
V
DS ,
Q
20
G
Drain-to-Source Voltage (V)
, Total Gate Charge (nC)
V
DS
= 90 V
V
C
C
C
V
GS
iss
rss
oss
DS
40
= 0 V, f = 1 MHz
= C
= C
= 225 V
= C
10
V
gs
gd
ds
DS
C
C
C
1
+ C
+ C
iss
oss
rss
= 360 V
gd
gd
For test circuit
see figure 13
, C
60
ds
Shorted
80
91056_07
91056_08
Fig. 7 - Typical Source-Drain Diode Forward Voltage
10
10
10
10
10
0.1
10
-1
1
2
1
0
3
5
2
5
2
5
2
5
2
0.4
Fig. 8 - Maximum Safe Operating Area
1
150
2
°
V
V
0.6
C
SD
DS
Operation in this area limited
, Source-to-Drain Voltage (V)
, Drain-to-Source Voltage (V)
5
0.8
25
10
T
T
Single Pulse
°
C
J
C
by R
= 150 °C
= 25 °C
2
1.0
DS(on)
5
S-83029-Rev. A, 19-Jan-09
Document Number: 91056
10
1.2
2
2
V
1.4
GS
= 0 V
5
10
100
1
10
ms
1.6
µs
ms
10
µs
3