IRCZ34PBF Vishay, IRCZ34PBF Datasheet - Page 6

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IRCZ34PBF

Manufacturer Part Number
IRCZ34PBF
Description
MOSFET N-CH 60V 30A TO-220-5
Manufacturer
Vishay
Series
HEXFET®r
Datasheet

Specifications of IRCZ34PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Current Sensing
Rds On (max) @ Id, Vgs
50 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 25V
Power - Max
88W
Mounting Type
Through Hole
Package / Case
TO-220-5 (Straight Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRCZ34PBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRCZ34PBF
Manufacturer:
FUJI
Quantity:
20 000
IRCZ34
T
, Junction Temperature (°C)
I
, Drain Current (Amps)
J
D
Fig. 15 Typical HEXSense Ratio vs.
Fig. 16 Typical HEXSense Ratio vs.
Junction Temperature
Drain Current
Fig. 18 HEXSense Ratio Test Circuit
V
, Gate-to-Source Voltage (Volts)
GS
Fig. 17 Typical HEXSense Ratio vs.
Gate Voltage
Mechanical drawings, Appendix A
Part marking information, Appendix B
Fig. 19 HEXSense Sensing Cell Output
Test Circuit diagrams, Appendix C
Capacitance Test Circuit
C-12

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