IRFI744GPBF Vishay, IRFI744GPBF Datasheet - Page 5

MOSFET N-CH 450V 4.9A TO220FP

IRFI744GPBF

Manufacturer Part Number
IRFI744GPBF
Description
MOSFET N-CH 450V 4.9A TO220FP
Manufacturer
Vishay
Datasheets

Specifications of IRFI744GPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
630 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
4.9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
1400pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads, Isolated), ITO-220AB
Transistor Polarity
N Channel
Continuous Drain Current Id
4.9A
Drain Source Voltage Vds
450V
On Resistance Rds(on)
630mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
40W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
*IRFI744GPBF
Document Number: 91157
S09-0012-Rev. A, 19-Jan-09
Vary t
required I
Fig. 9 - Maximum Drain Current vs. Case Temperature
p
Fig. 12a - Unclamped Inductive Test Circuit
to obtain
AS
R
10 V
G
V
DS
t
p
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
I
AS
D.U.T.
0.01 Ω
L
+
-
V
DD
Fig. 12b - Unclamped Inductive Waveforms
V
I
90 %
10 %
AS
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
DS
V
V
DS
GS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
10 V
V
GS
t
d(on)
IRFI744G, SiHFI744G
V
DS
t
r
t
p
D.U.T.
Vishay Siliconix
R
D
t
d(off)
V
DS
t
f
V
+
-
www.vishay.com
DD
V
DD
5

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