IRFBA22N50APBF Vishay, IRFBA22N50APBF Datasheet
IRFBA22N50APBF
Specifications of IRFBA22N50APBF
Related parts for IRFBA22N50APBF
IRFBA22N50APBF Summary of contents
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Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply l l High Speed Power Switching l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and l ...
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Static @ T = 25°C (unless otherwise specified) J Parameter V Drain-to-Source Breakdown Voltage (BR)DSS R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage I GSS Gate-to-Source Reverse Leakage Dynamic @ ...
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VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4. 4.5V 20µs PULSE WIDTH 0.1 0 Drain-to-Source Voltage (V) DS Fig 1. Typical Output Characteristics 100 T = ...
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1MHz iss 6000 rss oss ds gd 5000 4000 C iss 3000 C oss 2000 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) ...
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D.U 20V 0. Fig 12a. Unclamped Inductive Test Circuit V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge Fig 13a. ...
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D.U.T + ‚ - Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery Current D.U.T. V Waveform DS Re-Applied Voltage Inductor Curent Fig 14. For N-Channel HEXFET www.irf.com + ƒ - „ P.W. Period D = ...
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A 1.50 [.059] 0.50 [.020 4.00 [.157] 3.50 [.138] 3X 2.55 [.100] 0.25 [.010] 2X Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig ‚ Starting T = 25°C, L ...