FDS4435 Fairchild Semiconductor, FDS4435 Datasheet
FDS4435
Manufacturer Part Number
FDS4435
Description
MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS4435.pdf
(5 pages)
Specifications of FDS4435
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 8.8A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
24nC @ 5V
Input Capacitance (ciss) @ Vds
1604pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Rohs Compliant
YES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS4435TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDS4435
Manufacturer:
FCS
Quantity:
2 752
Part Number:
FDS4435
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4435-NL
Manufacturer:
FAIRCHILD
Quantity:
25 000
Part Number:
FDS4435-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS4435/4435
Manufacturer:
TOSHIBA
Quantity:
1
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
50 000
Company:
Part Number:
FDS4435A
Manufacturer:
FSC
Quantity:
5 713
Part Number:
FDS4435A
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS4435A-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS4435BE
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS4435
30V P-Channel PowerTrench MOSFET
General Description
This P -Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
Power management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
JA
J C
Device Marking
STG
FDS4435
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
Pin 1
D
D
SO-8
D
D
– Continuous
– Pulsed
D
FDS4435
D
Device
Parameter
S
S
S
S
S
S
G
G
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1c)
(Note 1)
Features
–8.8 A, –30 V
Low gate charge (17nC typical)
Fast switching speed
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
7
8
Tape width
–55 to +175
12mm
R
R
Ratings
DS(ON)
DS(ON)
–8.8
–30
–50
125
2.5
1.2
50
25
25
1
= 20 m @ V
= 35 m @ V
October 2001
4
3
2
1
GS
GS
FDS4435 Rev F1(W)
2500 units
Quantity
= –10 V
= –4.5 V
Units
C/W
C/W
C/W
W
V
V
A
C
Related parts for FDS4435
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET is produced using Fairchild Semiconductors advanced PowerTrench process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDS4435 Summary of contents
Page 1
... C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1c) (Note 1) Reel Size 13’’ October 2001 –10 V DS(ON –4.5 V DS(ON Ratings Units – –8.8 A –50 2.5 W 1.2 1 –55 to +175 C 50 C/W 125 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS4435 Rev F1(W) ...
Page 2
... Min Typ Max Units –30 V –21 mV/ C –1 100 nA –100 nA –1 –1.7 – mV =125 C – 1604 pF 408 pF 202 13 –2.1 A –0.73 –1.2 V (Note 2) c) 125°C/W when mounted on a minimum pad. FDS4435 Rev F1(W) A ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-4.5V GS -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -4. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS4435 Rev F1( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 FDS4435 Rev F1(W) 30 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...