FDS4435A Fairchild Semiconductor, FDS4435A Datasheet - Page 3

• Manufacturer Part Number: FDS4435A
• Description: MOSFET P-CH 30V 9A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS4435A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 17 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 5V
• Input Capacitance (ciss) @ Vds: 2010pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.017Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 9A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4435ATR






1.6
1.4
1.2
0.8
0.6
40
30
20
10

0
1

-50
0
V
V
GS
V
I
D
DS
GS
= -10V
= -9A

= -5V
= -10V
-25
-6.0V
1
-V
-4.5V
-V

T
GS
0
DS
J
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
-4.0V
, DRAIN-SOURCE VOLTAGE (V)

-3.5V
25
2

-3.0V
50
T
J
= -55

-2.5V
3
75
O
C
125
O

100
C)
O
C
4
25

O
125
C
150

5
0.0001
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.001
0.01
2.4
2.2
1.8
1.6
1.4
1.2
0.8
100
0.1
0
10
2
1
1
2
0
0
V
V
GS
GS
= 0V
= -3.5V
0.2
-V
-V
10
SD
-4.0V
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
4
, GATE TO SOURCE VOLTAGE (V)
A
= 125
0.4
-4.5V
-I
D
o
, DRAIN CURRENT (A)
C
-5.0V
20
0.6
25
o
-6.0V
C
6
-55
o
0.8
T
C
-7.0V
J
T
= 125
30
J
= 25
-8.0V
O
O
1
C
C
8
-10V
40
I
D
1.2
= -4.5A
1.4
10
50
D