FDB4020P Fairchild Semiconductor, FDB4020P Datasheet - Page 2

• Manufacturer Part Number: FDB4020P
• Description: MOSFET P-CH 20V 16A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDB4020P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 8A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 665pF @ 10V
• Power - Max: 37.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
2. Pulse Test: Pulse Width
1. R
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
SM
FS
BV
V
of 2 oz. copper.
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the juntion-to-case and case-to-ambient thermal resistance.For T0-263 the device is mounted on circuit board with a 1in
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current V
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
300 s, Duty Cycle
Parameter
(Note 2)
(Note 2)
2.0%
T
A
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
I
V
D
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
= -16 A, V
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -5 V,
= 0 V, I
= 8 V, V
= -8 V, V
= -4.5 V,I
= -4.5 V,I
= -2.5 V,I
= -4.5 V, V
= -5 V, I
= -4.5 V, R
= 0 V, I
Test Conditions
GS
, I
D
D
S
D
D
DS
GS
DS
= -16 A
= -250 A
= -250 A
D
D
D
= -8 A
= -1 A,
GS
GS
= 0 V
= -8 A,T
DS
GEN
= -8 A,
= -7 A
= -4.5 V
= 0 V
= 0 V
= 0 V,
= -5 V
= 6
J
=125 C
(Note 2)
(Note 2)
(Note 2)
Min
-0.4
-20
-20
0.068
0.098
0.096
Typ
-0.58
665
270
-28
9.5
1.3
2.2
14
70
24
50
29
2
8
0.110
Max
-100
0.08
0.13
100
-1.2
-16
-48
16
38
80
45
13
-1
-1
2
FDP4020P Rev. B
Units
mV/ C
mV/ C
pad
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A