FDS6673AZ Fairchild Semiconductor, FDS6673AZ Datasheet
FDS6673AZ
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FDS6673AZ Summary of contents
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... R Thermal Resistance, Junction-to-Case θ JC Package Marking and Ordering Information Device Marking FDS6673AZ FDS6673AZ ©2005 Fairchild Semiconductor Corporation FDS6673AZ Rev. C(W) ® MOSFET General Description = –10 V This P-Channel MOSFET has been designed specifically – 4.5 V improve the overall efficiency of DC/DC converters using either ...
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... Scale letter size paper 2. Pulse Test: Pulse Width < 300 µ s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6673AZ Rev. C( 25°C unless otherwise noted A Test Conditions = – ...
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... T , JUNCTION TEMPERATURE (°C) J Figure 3. On-Resistance Variation with Temperature - 1 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics. FDS6673AZ Rev. C(W) 3.8 3.4 -3. 3.0V GS 2.6 2.2 -3.0V 1.8 1.4 1 0.6 1 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.02 0.02 0.02 ...
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... DRAIN-SOURCE VOLTAGE (V) DS Figure 9. Maximum Safe Operating Area 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 Figure 11. Transient Thermal Response Curve. FDS6673AZ Rev. C(W) 6000 V = -10V -15V DS 5000 -20V 4000 3000 2000 1000 Figure 8. Capacitance Characteristics. ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FDS6673AZ Rev. C(W) IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ PowerSaver™ MICROCOUPLER™ PowerTrench MicroFET™ ...