ZVN2110GTC Diodes Zetex, ZVN2110GTC Datasheet
ZVN2110GTC
Manufacturer Part Number
ZVN2110GTC
Description
MOSFET N-CHAN 100V SOT223
Manufacturer
Diodes Zetex
Datasheet
1.ZVN2110GTA.pdf
(3 pages)
Specifications of ZVN2110GTC
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4 Ohm @ 1A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
500mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
75pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
SOT223 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – OCTOBER 1995
FEATURES
*
*
PARTMARKING DETAIL -
COMPLEMENTARY TYPE -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
DRAIN-SOURCE DIODE CHARACTERISTICS
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
Diode Forward Voltage (1)
Reverse Recovery Time
PARAMETER
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance (1)(2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
PARAMETER
6A PULSE DRAIN CURRENT
FAST SWITCHING SPEED
amb
=25°C
ZVN2110
ZVP2110G
amb
V
T
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
SYMBOL
GSS
DSS
D(on)
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
SD
RR
=25°C
DSS
MIN. TYP. MAX. UNIT
100
0.8
1.5
250
MIN. TYP. MAX. UNIT
3 - 387
amb
0.1
2
350
59
16
4
4
4
8
8
0.82
112
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
stg
2.4
20
100
4
75
25
8
7
8
13
13
1
V
ns
V
V
nA
A
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
CONDITIONS.
CONDITIONS.
I
I
V
V
V
V
V
V
V
V
S
F
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=0.32A, V
=0.32A, V
=1mA, V
=1mA, V
-55 to +150
= 20V, V
=100V, V
=80V, V
=25V, V
=10V, I
=25V, I
=25 V, V
VALUE
25V, I
100
500
ZVN2110G
6
2
20
GS
DS
D
D
D
D
GS
GS
=1A
=1A
GS
=1A
GS
GS
GS
=0V
= V
DS
=0V, T=125°C(2)
=10V
=0V, f=1MHz
=0, I
=0
=0
=0V
GS
R
G
=0.1A
UNIT
mA
°C
W
A
V
V
D
S
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ZVN2110GTC Summary of contents
Page 1
SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – OCTOBER 1995 FEATURES * 6A PULSE DRAIN CURRENT * FAST SWITCHING SPEED PARTMARKING DETAIL - COMPLEMENTARY TYPE - ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T Pulsed ...
Page 2
ZVN2110G TYPICAL CHARACTERISTICS V GS= 10V 2 1.2 6V 0 Drain Source Voltage (Volts) DS Output Characteristics ...
Page 3
TYPICAL CHARACTERISTICS 500 400 300 V 25V DS= 200 100 0 0 0.2 0.4 0.6 0 Drain Current (Amps) D(on) Transconductance v drain current 100 -Drain Source Voltage ...