FQPF18N50V2 Fairchild Semiconductor, FQPF18N50V2 Datasheet - Page 4

• Manufacturer Part Number: FQPF18N50V2
• Description: MOSFET N-CH 500V 18A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF18N50V2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 265 mOhm @ 9A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3290pF @ 25V
• Power - Max: 69W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Other names: Q2658628

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
Figure 9-1. Maximum Safe Operating Area
-1
20
15
10
1.2
1.1
1.0
0.9
0.8
2
1
0
10
5
0
Figure 7. Breakdown Voltage Variation
-100
25
0
※ Notes :
1. T
2. T
3. Single Pulse
Figure 10. Maximum Drain Current
C
J
= 150
= 25
o
-50
C
o
C
50
vs. Case Temperature
T
V
T
J
vs. Temperature
for FQP18N20V2
, Junction Temperature [
C
DS
, Case Temperature [ ℃ ]
, Drain-Source Voltage [V]
0
Operation in This Area
is Limited by R
10
75
1
50
DS(on)
DC
100
10 ms
100
1 ms
(Continued)
o
C]
100 us
※ Notes :
10
1. V
2. I
125
2
D
GS
150
= 250 μ A
= 0 V
150
200
10
10
10
10
-1
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maxiumum Safe Operating Area
-100
0
※ Notes :
1. T
2. T
3. Single Pulse
Figure 8. On-Resistance Variation
C
J
= 150
= 25
o
-50
C
o
C
V
DS
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
for FQPF18N20V2
Operation in This Area
is Limited by R
10
0
1
DC
50
DS(on)
100 ms
10 ms
1 ms
100
100 us
10
o
C]
2
※ Notes :
1. V
2. I
150
D
GS
= 9 A
= 10 V
Rev. B, August 2002
200