FQD5N20LTM Fairchild Semiconductor, FQD5N20LTM Datasheet - Page 4

• Manufacturer Part Number: FQD5N20LTM
• Description: MOSFET N-CH 200V 3.8A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5N20LTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 1.9A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.2nC @ 5V
• Input Capacitance (ciss) @ Vds: 325pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor International
Typical Characteristics
10
10
10
1.2
1.1
1.0
0.9
0.8
-1
Figure 9. Maximum Safe Operating Area
-100
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
V
vs. Temperature
J
DS
, Junction Temperature [
Operation in This Area
is Limited by R
, Drain-Source Voltage [V]
0
※ Notes :
1 0
1 0
10
1. T
2. T
3. Single Pulse
1
- 1
0
1 0
C
J
= 150
= 25
- 5
0 .0 1
0 .0 2
DS(on)
D = 0 .5
o
0 .0 5
C
o
0 .2
0 .1
50
DC
C
10 ms
Figure 11. Transient Thermal Response Curve
1 ms
100
1 0
(Continued)
o
- 4
C]
s in g le p u ls e
※ Notes :
10
100 s
1. V
2. I
t
2
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 μ A
= 0 V
150
1 0
- 3
200
1 0
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
3
2
1
0
-100
25
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
※ N o t e s :
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
P
-50
DM
θ J C
J M
50
- T
( t ) = 3 . 4 ℃ / W M a x .
vs. Case Temperature
C
T
= P
vs. Temperature
J
T
t
, Junction Temperature [
1
C
t
1 0
0
, Case Temperature [ ℃ ]
D M
2
0
* Z
75
1
/ t
θ J C
2
( t )
50
100
1 0
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 2.25 A
= 10 V
Rev. A3, October 2008
200
150