IRLU110ATU Fairchild Semiconductor, IRLU110ATU Datasheet - Page 2
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IRLU110ATU
Manufacturer Part Number
IRLU110ATU
Description
MOSFET N-CH 100V 4.7A I-PAK
Manufacturer
Fairchild Semiconductor
Datasheet
1.IRLR110ATM.pdf
(9 pages)
Specifications of IRLU110ATU
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
440 mOhm @ 2.35A, 5V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
4.7A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
8nC @ 5V
Input Capacitance (ciss) @ Vds
235pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IRLR/U110A
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=4mH, I
(3) I
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle
(5) Essentially Independent of Operating Temperature
BV/ T
BV
V
R
V
C
t
t
I
I
C
C
Q
Q
I
Q
GS(th)
DS(on)
d(on)
d(off)
GSS
DSS
Q
g
I
SM
t
t
S
SD
rr
oss
t
DSS
iss
rss
fs
r
gs
gd
rr
SD
f
g
J
5.6A, di/dt
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=4.7A, V
250A/ s, V
Characteristic
Characteristic
DD
=25V, R
DD
G
=27 , Starting T
BV
DSS
(T
, Starting T
C
=25 C unless otherwise specified)
(1)
(4)
2%
J
=25 C
Min.
Min.
100
J
1.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
=25 C
Typ.
Typ.
0.23
180
0.1
5.5
0.9
3.5
3.2
50
20
10
17
85
--
--
--
--
--
--
--
--
--
--
8
8
Max. Units
Max. Units
-100
0.44
100
100
235
2.0
4.7
1.5
10
65
25
25
30
45
25
16
--
--
--
--
--
8
--
--
V/ C
nA
nC
ns
pF
ns
V
V
A
V
A
C
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=250 A
=5.6A
F
=25 C,I
=25 C,I
/dt=100A/ s
=12
=0V,I
=5V,I
=20V
=-20V
=100V
=80V,T
=5V,I
=40V,I
=0V,V
=50V,I
=80V,V
See Fig 13
Test Condition
Test Condition
See Fig 5
D
D
D
S
F
DS
=250 A
=250 A
=2.35A
D
D
=5.6A
=4.7A,V
C
GS
=2.35A
=5.6A,
=125 C
=25V,f =1MHz
=5V,
See Fig 7
GS
=0V
(4) (5)
(4) (5)
(4)
(4)
(4)
2