FQD5P20TF Fairchild Semiconductor, FQD5P20TF Datasheet - Page 3

• Manufacturer Part Number: FQD5P20TF
• Description: MOSFET P-CH 200V 3.7A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQD5P20TF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 1.85A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 3.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 13nC @ 10V
• Input Capacitance (ciss) @ Vds: 430pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Internationa
Typical Characteristics
750
600
450
300
150
10
10
3.0
2.4
1.8
1.2
0.6
0.0
10
10
0
-1
-2
10
1
0
10
0
-1
-1
Top :
Bottom : -5.5 V
Figure 1. On-Region Characteristics
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
V
GS
3
-V
-V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
D
10
10
, Drain Current [A]
0
0
V
V
GS
GS
= - 20V
= - 10V
6
C
C
C
iss
oss
rss
C
C
C
iss
oss
rss
※ Notes :
= C
= C
= C
10
1. 250μ s Pulse Test
2. T
※ Note : T
9
gs
gd
10
ds
1
C
+ C
+ C
1
= 25℃
gd
gd
(C
※ Notes :
J
1. V
2. f = 1 MHz
ds
= 25℃
= shorted)
GS
= 0 V
12
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.0
0
2
Figure 2. Transfer Characteristics
0.5
2
25℃
150℃
150℃
4
-V
-V
Q
SD
GS
G
1.0
4
, Source-Drain Voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
25℃
V
DS
V
DS
= -160V
V
DS
= -100V
= -40V
-55℃
1.5
6
6
2.0
8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= -40V
= 0V
2.5
10
D
= -4.8 A
Rev. A1, October 2008
3.0
10
12