NDS9430A Fairchild Semiconductor, NDS9430A Datasheet - Page 6

• Manufacturer Part Number: NDS9430A
• Description: MOSFET P-CH 20V 5.3A 8-SOIC
• Manufacturer: Fairchild Semiconductor

Specifications of NDS9430A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 5.3A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 950pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Electrical and Thermal Characteristics
Figure 13. Transconductance Variation with Drain
2 0
1 6
1 2
6
5
4
3
2
8
4
0
0
0
Figure 15. Maximum Steady-State Drain
1c
1 b
Current and Temperature
V
DS
0 .0 0 5
0 .0 0 2
0 .0 0 1
0 .0 5
0 .0 2
0 .0 1
0 .5
0 .2
0 .1
0 .0001
= -15V
1
Current versus Copper Mounting Pad
Area.
0.2
2oz COPPER MOUNTING PAD AREA (in
-5
D = 0.5
I
D
Figure 17. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
, DRAIN CURRENT (A)
0.2
0.4
0.1
0.05
0 .001
0.02
depending on the circuit board design.
0.01
-10
Single Pulse
T = -55°C
J
0.6
25°C
4.5"x5" FR-4 Board
T
Still Air
V
A
G S
-15
= 2 5 C
0 .0 1
= - 1 0 V
125°C
2
0.8
)
o
-20
1a
1
0 .1
t , TIME (sec)
(continued)
1
Figure 16. Maximum Safe Operating Area
0.03
0.01
0.3
0.1
3 0
1 0
3
1
Figure 14. SO-8 Maximum Steady-State Power
2.5
1.5
0.5
0.1
2
1
0
1c
1 b
R
0.2
Dissipation versus Copper Mounting Pad
Area.
SINGLE PULSE
J A
.
V
T
GS
= See Note 1c
A
1
= 25°C
0.2
= -10V
- V
2oz COPPER MOUNTING PAD AREA (in
0.5
DS
, DRAIN-SOURCE VOLTAGE (V)
1
0.4
P(pk)
2
T - T
Duty Cycle, D = t
1 0
R
J
R
JA
t
1
A
JA
(t) = r(t) * R
t
5
= P * R
0.6
2
= See Note 1c
1 0
4.5"x5" FR-4 Board
T
Still Air
JA
1
A
/ t
= 2 5 C
(t)
JA
1 0 0
2
2
0.8
)
o
3 0
NDS9430A Rev.A
3 0 0
5 0
1a
1