HUF76407D3S Fairchild Semiconductor, HUF76407D3S Datasheet

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HUF76407D3S

Manufacturer Part Number
HUF76407D3S
Description
MOSFET N-CH 60V 12A DPAK
Manufacturer
Fairchild Semiconductor
Series
UltraFET™r
Datasheet

Specifications of HUF76407D3S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
92 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
350pF @ 25V
Power - Max
38W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HUF76407D3S
Manufacturer:
FAIRCHILD
Quantity:
12 500
©2001 Fairchild Semiconductor Corporation
11A, 60V, 0.107 Ohm, N-Channel, Logic
Level UltraFET® Power MOSFET
Packaging
Symbol
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain Current
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .UIS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
NOTE:
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
1. T
Continuous (T
Continuous (T
Continuous (T
Continuous (T
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
Package Body for 10s, See Techbrief TB334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
(FLANGE)
DRAIN
J
= 25
JEDEC TO-251AA
HUF76407D3
o
C to 150
C
C
C
C
= 25
= 25
= 135
= 135
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
o
o
C, V
C, V
o
o
GS
G
C, V
C, V
SOURCE
DRAIN
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
GS
GATE
GS
GS
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
S
SOURCE
T
Data Sheet
GATE
For severe environments, see our Automotive HUFA series.
C
= 25
JEDEC TO-252AA
HUF76407D3S
o
C, Unless Otherwise Specified
(FLANGE)
DRAIN
Features
• Ultra Low On-Resistance
• Simulation Models
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs R
Ordering Information
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST.
HUF76407D3
HUF76407D3S
- r
- r
- Temperature Compensated PSPICE® and SABER™
- Spice and SABER Thermal Impedance Models
- www.fairchildsemi.com
PART NUMBER
HUF76407D3, HUF76407D3S
Electrical Models
DS(ON)
DS(ON)
December 2001
J
, T
= 0.092 Ω,
= 0.107 Ω,
DGR
DSS
STG
pkg
DM
GS
D
D
D
D
D
L
TO-251AA
TO-252AA
GS
V
V
PACKAGE
GS
GS
Figures 6, 14, 15
Curves
HUF76407D3S
HUF76407D3,
= 10V
= 5V
-55 to 175
Figure 4
0.25
± 16
300
260
60
60
11
12
38
6
6
HUF76407D3, HUF76407D3S Rev. B
76407D
76407D
BRAND
UNITS
W/
o
o
o
W
V
V
V
A
A
A
A
C
C
C
o
C

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HUF76407D3S Summary of contents

Page 1

... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUF76407D3 HUF76407D3S NOTE: When ordering, use the entire part number. Add the suffi obtain the TO-252AA variant in tape and reel, e.g., HUF76407D3ST Unless Otherwise Specified = 0.092 Ω, = 10V 0.107 Ω ...

Page 2

... MIN TYP - - - - - - - - HUF76407D3, HUF76407D3S Rev. B MAX UNITS - µ µ A 250 ± 100 Ω 0.092 Ω 0.107 Ω 0.117 o 3.94 C/W o 100 C/W 170 132 ns 11.3 nC 6.2 nC 0.43 ...

Page 3

... RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY 10V 4. 100 125 T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS HUF76407D3, HUF76407D3S Rev. B 150 175 θ 175 - T C 150 1 10 ...

Page 4

... PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 V 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUF76407D3, HUF76407D3S Rev + 3. 10V 12A GS D 120 160 200 o C) ...

Page 5

... I = 250µA D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT 10V 30V 12A d(OFF GATE TO SOURCE RESISTANCE (Ω) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUF76407D3, HUF76407D3S Rev. B 120 160 200 12A d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2001 Fairchild Semiconductor Corporation DUT 0.01Ω DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUF76407D3, HUF76407D3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF76407D3, HUF76407D3S Rev. B DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUF76407D3, HUF76407D3S Rev. B LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUF76407D3, HUF76407D3S Rev. B ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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